Ji-hoon Ahn

Assistant Professor

Korea Maritime and Ocean University

South Korea

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About

Ji-hoon Ahn is an Assistant Professor at Korea Maritime and Ocean University in South Korea. His research focuses on advanced materials and thin films, with significant contributions to the areas of atomic layer deposition, electrostatic capacitors, and ferroelectric materials. Recent publications highlight his work on high energy storage performance and the development of novel deposition techniques for metal oxides and hybrid films.

Articles (28)

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2022

Collaborators (3)

Bo Soo Kang

SOUTH KOREA

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Tae Joo Park

Professor

Hanyang University - Ansan Campus

SOUTH KOREA

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Woo‐Hee Kim

SOUTH KOREA

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Ji-hoon Ahn

Research Interests

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About

Articles (28)

Atomic Layer Deposition of ZrO2 Films at High Temperatures (>350 °C) Using a Modified Cyclopentadienyl Zr Precursor

Oxidation-State-Dependent Selective Atomic Layer Etching of Metal Oxides

High-temperature atomic layer deposition of HfO2 film with low impurity using a novel Hf precursor

High Energy Storage Performance of Nanometer-Thick Al-Doped ZrO2 Films with Antiferroelectricity for Electrostatic Capacitors

Effect of the H2/N2 Ratio on Molybdenum Nitride Thin Films Deposited by Plasma-Enhanced Atomic Layer Deposition: Applications for Next-Generation Interconnects

High-Performance Negative Capacitance Field-Effect Transistors with Synthetic Monolayer MoS2

Unintended Soft Breakdown Mechanism Limiting Ultrathin Ferroelectric HZO Films Scaling

Molecular layer deposition of tin-based organic–inorganic hybrid films as photoresists

Polarization dynamics of the ferroelectric hafnium zirconium oxide thin-film capacitor during the relaxation process

Area-selective deposition of mos2 using self-assembled monolayers for high-precision patterning

Low-resistivity molybdenum-carbide thin films formed by thermal atomic layer deposition with pressure-assisted decomposition reaction

Ultrathin Metal Films with Low Resistivity via Atomic Layer Deposition: Process Pressure Effect on Initial Growth Behavior of Ru Films

Highly area-selective atomic layer deposition of device-quality Hf1-xZrxO2 thin films through catalytic local activation

First demonstration of 2T0C-FeDRAM: a-ITZO FET and double gate a-ITZO/a-IGZO FeFET with a record-long multibit retention time of >4-bit and >2000 s

Advanced atomic layer deposition (ALD): controlling the reaction kinetics and nucleation of metal thin films using electric-potential-assisted ALD

Advanced atomic layer deposition: metal oxide thin film growth using the discrete feeding method

High-quality SiNx thin-film growth at 300 °C using atomic layer deposition with hollow-cathode plasma

Yttrium Doping Effects on Ferroelectricity and Electric Properties of As-Deposited Hf1−xZrxO2 Thin Films via Atomic Layer Deposition

Low-Temperature Growth of 2D-MoS2 Thin Films by Plasma-Enhanced Atomic Layer Deposition Using a New Molybdenum Precursor and Applicability to Gas Sensors

Enhanced dielectric and energy storage performances of Hf0.6Zr0.4O2 thin films by Al doping

Polarization switching dynamics simulation by using the practical distribution of ferroelectric properties

Optimization Method for Conductance Modulation in Ferroelectric Transistor for Neuromorphic Computing

Enhanced physical and electrical properties of HfO2 deposited by atomic layer deposition using a novel precursor with improved thermal stability

Implementation of rutile-TiO2 thin films on TiN without post-annealing through introduction of SnO2 and its improved electrical properties

Spike Optimization to Improve Properties of Ferroelectric Tunnel Junction Synaptic Devices for Neuromorphic Computing System Applications

Effects of Zr content and annealing on ferroelectricity of as-grown crystalline Hf1-xZrxO2 thin films using Hf[Cp(NMe2)3] and Zr[Cp(NMe2)3] precursors via atomic layer deposition

Advanced Atomic Layer Deposition: Ultrathin and Continuous Metal Thin Film Growth and Work Function Control Using the Discrete Feeding Method

A Simple Strategy to Realize Super Stable Ferroelectric Capacitor via Interface Engineering

Collaborators (3)

Bo Soo Kang

Tae Joo Park

Woo‐Hee Kim

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