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Jin Wei

Assistant Professor

Peking University

China

Research Interests

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Articles (20)

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2026

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2025

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2024

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2024

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2024

Collaborators (3)

Junlei Zhao

Research Associate Professor

Southern University of Science and Technology (SUSTech)

CHINA

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Kevin J Chen

Professor

The Hong Kong University of Science and Technology

HONG KONG

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Mengyuan Hua

The Hong Kong University of Science and Technology

HONG KONG

View details

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Jin Wei

Research Interests

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Articles (20)

Monolithically Integrating Polarization-Doped InGaN p-FET and GaN n-FET for Complementary Logic Circuitry

Semiconducting p-GaN gate HEMT with avalanche-like non-destructive breakdown capability

Enhancement-mode GaN p-FET with p-NiO/p-GaN heterojunction gate featuring improved threshold voltage stability and channel conductivity based on low interface trap density

Mg diffusion modulation strategy for high-voltage etched-and-regrown GaN p–n junctions

Enhanced threshold voltage stability in GaN p-FETs via post-dielectric thermal anneal

10000-Cycle/10-μs Short Circuit Operation in 650-V E-Mode p-GaN Gate HEMT With Schottky Source Extension

A 6-A 93.8%-Peak-Efficiency 5-V-to-Sub-1-V Segment-Interlaced SC-Parallel-Inductor Converter Featuring Inherently Balanced Ganging for Wafer-Scale Computing System

Body Diode Induced Negative-Bias V th Instability of Synchronous SiC MOSFET in Bridge-Leg Circuit

Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMTs

Revisiting the 1-D Theoretical Limit of Wide Bandgap Semiconductor Power Devices via Variational Calculus

Process‐Dependent Performance of Recessed‐Gate Enhancement‐Mode GaN p‐FET

GaN-on-Si monolithic bidirectional switch with virtual body to suppress substrate-induced dynamic ON-resistance degradation

900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect

Split-p-GaN Gate HEMT With Suppressed Negative Vth Shift and Enhanced Robustness Against False Turn-On

High-Current E-Mode InGaN/GaN p-FET on p-GaN Gate HEMT Platform

Full-Range Investigation of Drain-Dependent Bidirectional Dynamic Threshold Voltage Shift in Schottky-Type p-GaN Gate HEMT

RESURF Ga2O3-on-SiC Field Effect Transistors for Enhanced Breakdown Voltage

Dynamic Extension Behavior of the Depletion Region in GaN HEMTs Monitored With a Channel-Probe Branch Structure

GaN-on-sapphire JTE-anode lateral field-effect rectifier for improved breakdown voltage (>2.5 kV) and dynamic RON

Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT

Collaborators (3)

Junlei Zhao

Kevin J Chen

Mengyuan Hua

Make your next move.

Jin Wei

Research Interests

Make your next move.

Articles (20)

Monolithically Integrating Polarization-Doped InGaN p-FET and GaN n-FET for Complementary Logic Circuitry

Semiconducting p-GaN gate HEMT with avalanche-like non-destructive breakdown capability

Enhancement-mode GaN p-FET with p-NiO/p-GaN heterojunction gate featuring improved threshold voltage stability and channel conductivity based on low interface trap density

Mg diffusion modulation strategy for high-voltage etched-and-regrown GaN p–n junctions

Enhanced threshold voltage stability in GaN p-FETs via post-dielectric thermal anneal

10000-Cycle/10-μs Short Circuit Operation in 650-V E-Mode p-GaN Gate HEMT With Schottky Source Extension

A 6-A 93.8%-Peak-Efficiency 5-V-to-Sub-1-V Segment-Interlaced SC-Parallel-Inductor Converter Featuring Inherently Balanced Ganging for Wafer-Scale Computing System

Body Diode Induced Negative-Bias V th Instability of Synchronous SiC MOSFET in Bridge-Leg Circuit

Miller-Current Suppressing Technology for False Turn-On Protection of Commercial p-GaN HEMTs

Revisiting the 1-D Theoretical Limit of Wide Bandgap Semiconductor Power Devices via Variational Calculus

Process‐Dependent Performance of Recessed‐Gate Enhancement‐Mode GaN p‐FET

GaN-on-Si monolithic bidirectional switch with virtual body to suppress substrate-induced dynamic ON-resistance degradation

900-V active-passivation p-GaN gate HEMT with suppressed floating Si substrate induced back-gating effect

Split-p-GaN Gate HEMT With Suppressed Negative Vth Shift and Enhanced Robustness Against False Turn-On

High-Current E-Mode InGaN/GaN p-FET on p-GaN Gate HEMT Platform

Full-Range Investigation of Drain-Dependent Bidirectional Dynamic Threshold Voltage Shift in Schottky-Type p-GaN Gate HEMT

RESURF Ga2O3-on-SiC Field Effect Transistors for Enhanced Breakdown Voltage

Dynamic Extension Behavior of the Depletion Region in GaN HEMTs Monitored With a Channel-Probe Branch Structure

GaN-on-sapphire JTE-anode lateral field-effect rectifier for improved breakdown voltage (&gt;2.5 kV) and dynamic RON

Enhanced robustness against hot-electron-induced degradation in active-passivation p-GaN gate HEMT

Collaborators (3)

Junlei Zhao

Kevin J Chen

Mengyuan Hua

Make your next move.

GaN-on-sapphire JTE-anode lateral field-effect rectifier for improved breakdown voltage (>2.5 kV) and dynamic RON