Launch week offerEnds in00h00m00s

annual Promonthly Pro

Kevin J Chen

Professor

The Hong Kong University of Science and Technology

Hong Kong

Research Interests

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Articles (20)

Year:

2026

Year:

2026

Year:

2026

Year:

2026

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Collaborators (5)

Rongming Chu

UNITED STATES

View details

Zheyang Zheng

Professor

University of Science and Technology of China

CHINA

View details

Ronald Schrimpf

Professor

Vanderbilt University

UNITED STATES

View details

Jin Wei

Assistant Professor

Peking University

CHINA

View details

Mengyuan Hua

The Hong Kong University of Science and Technology

HONG KONG

View details

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Kevin J Chen

Research Interests

Make your next move.

Articles (20)

An RON-Based Current Sensing Scheme for GaN HEMT IPM Motor Drive System

Suppression of back-gating effects in GaN-on-Si p-GaN gate double-channel HEMT by enhanced storage and spreading of photon-generated holes

A Crosstalk-Free GaN-on-Si Power Integration Platform for Integrated Half-Bridge Circuits and Bidirectional Switches

GaN-on-Si Double-Channel Bi-Directional Switch Free of Back-Gating Effects by Synchronized Photonic-Electronic Driving Scheme

(Ultra)wide-bandgap semiconductors for extreme environment electronics

Perspectives on GaN/SiC hybrid power transistors: A review on heteroepitaxial growth, processing, and device operation

GaN-on-Si monolithic bidirectional switch with virtual body to suppress substrate-induced dynamic ON-resistance degradation

Unlocking the Full Potential of GaN/SiC Cascode Device With 3D Co-Packaging and Enhanced dv/dt Control Capability

A Dynamic Two-Stage Gate Driver for Unlocking the Fast-Switching Potential of GaN HEMT

Suppression of Drain-Bias-Induced VTH Instability in Schottky-Type p-GaN Gate HEMTs With Voltage Seatbelt

A Crosstalk-Free GaN-on-Si Power Integration Platform for Integrated Half-Bridge Circuits and Bi-directional Switches

A Gate Driving Scheme for GaN GIT with Enhanced Short Circuit Capability for Motor Drive Application

A Self-Powered Gate Driving Scheme Enabled by the GaN/SiC Cascode Power Device

A p-GaN gate monolithic bi-directional switch with active isolation for balanced performance

Accurate Dynamic on-Resistance Characterization of Low-Voltage GaN Power HEMTs

Demonstration of Synchronized Photonic-Electronic Driving (SPED) Scheme for p-GaN Gate HEMTs

Dislocation-assisted electron and hole transport in GaN epitaxial layers

E-Mode p-GaN Gate Punch-Through HEMT with Robust Non-Destructive Drain Breakdown

Enhanced Photon-Generated Hole Spreading in p-GaN Gate Double-Channel HEMT for Suppression of Back-Gating Effect from Si Substrate

Expanded Gate-Voltage Operating Range of p-GaN Gate HEMTs Operated in Synchronized Photonic-Electronic Driving (SPED) Scheme

Collaborators (5)

Rongming Chu

Zheyang Zheng

Ronald Schrimpf

Jin Wei

Mengyuan Hua

Make your next move.