Kazuo Tsutsui

Professor

Tokyo Institute of Technology

Japan

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About

Kazuo Tsutsui is a Professor at the Tokyo Institute of Technology in Japan. His research areas include the study of various thin film materials, with recent publications focusing on MoS2 and WS2 films, ferroelectric materials, and enhancements in material quality through innovative treatments. His work contributes significantly to advancements in semiconductor technology and material science.

Articles (11)

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2025

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2025

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2024

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2024

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2023

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2023

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2023

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2021

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2021

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JAPAN

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N. Mori

JAPAN

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Kazuo Tsutsui

Research Interests

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Articles (11)

Improvement of MoS2 Film Quality by Low Flux of Sputtered Particles Using a Molybdenum Grid

Impact of Underlying Insulators on the Crystallinity and Antisite Defect Formation in PVD-MoS2 Films

Conductivity Enhancement of PVD-WS2 Films Using Cl2-Plasma Treatment Followed by Sulfur-Vapor Annealing

Oxygen-atom Incorporated Ferroelectric AIScN Capacitors for Multi-level Operation

Effects of hydrogen radical treatment on piezoresistance coefficients of germanium

Chemical states of PVD-ZrS2 film underneath scaled high-k film with self-oxidized ZrO2 film as interfacial layer

Doping-Free Complementary Metal-Oxide-Semiconductor Inverter Based on N-Type and P-Type Tungsten Diselenide Field-Effect Transistors With Aluminum-Scandium Alloy and Tungsten Oxide for Source/Drain Contact

Publisher's Note: “Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering” [Appl. Phys. Lett. 118, 082902 (2021)]

Sheet Resistance Reduction of MoS₂ Film Using Sputtering and Chlorine Plasma Treatment Followed by Sulfur Vapor Annealing

WS2 Film by Sputtering and Sulfur-Vapor Annealing, and its pMISFET With TiN/HfO2 Top-Gate Stack, TiN Bottom Contact, and Ultra-Thin Body and Box

Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering

Collaborators (6)

Masaya Hamada

Shigetaka Tomiya

Yasuhide MOCHIZUKI

Takuya Hoshii

Kazuaki Kuwahata

N. Mori

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