Takuya Hoshii

Assistant Professor

Tokyo Institute of Technology

Japan

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Dr. Takuya Hoshii is an Assistant Professor at the Tokyo Institute of Technology in Japan. His research areas encompass semiconductor devices, particularly focusing on the properties and fabrication of various materials such as SiC, WSe2, and AlScN. His recent publications include studies on the interface properties of MOS devices, the electrical characteristics of ferroelectric materials, and the investigation of defects in semiconductor structures.

Articles (19)

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2025

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2021

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2021

Collaborators (2)

Kazuo Tsutsui

Professor

Tokyo Institute of Technology

JAPAN

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Akira Uedono

Professor

University of Tsukuba

JAPAN

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Takuya Hoshii

Research Interests

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About

Articles (19)

Interface properties of SiC MOS devices with NH3 plasma nitridation of ultrathin SiO2 interfacial layer

Fabrication of n-type and p-type WSe2 field-effect transistors and their low-voltage CMOS inverter operation

Improved electrical characteristics of 4H-SiC (0001) MOS devices with atomic layer deposited SiO2 gate dielectric with H2O plasma

Identification of compressive strain in thin ferroelectric Al1–x Sc x N films by Raman spectroscopy

Reactive sputtering of ferroelectric AlScN films with H2 gas flow for endurance improvement

Oxygen-atom Incorporated Ferroelectric AIScN Capacitors for Multi-level Operation

(Invited) Influence of Target-Sample Distance on Residual Stress for Sputter-Deposited Ferroelectric AlScN

Threshold Voltage Shift of P-Ch GaN Misfets with Charge Trapping Insulator

Vacancy-type defects in AlInN/AlN/GaN structures probed by monoenergetic positron beam

Robust formation of ferroelectric HfO2 films by Y2O3 sub-monolayer lamination

Field cycling behavior and breakdown mechanism of ferroelectric Al0.78Sc0.22N films

GaN high electron mobility transistors (HEMTs) with self-upward-polarized AlScN gate dielectrics toward enhancement-mode operation

Influence of sputtering power on the switching and reliability of ferroelectric Al0.7Sc0.3N films

Minority carrier lifetime extraction methodology based on parallel pn diodes with a field plate

Suppression of decay time in transient drain current of back-gated GaN HEMT under UV exposure

Experimental demonstration of high-gain CMOS inverter operation at low V dd down to 0.5 V consisting of WSe2 n/p FETs

Cerium oxide capping on Y-doped HfO2 films for ferroelectric phase stabilization with endurance improvement

On the thickness scaling of ferroelectricity in Al0.78Sc0.22N films

Publisher's Note: “Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering” [Appl. Phys. Lett. 118, 082902 (2021)]

Collaborators (2)

Kazuo Tsutsui

Akira Uedono

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