Kenji Iso

Designated professor

Nagoya University

Japan

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About

Kenji Iso is a Designated Professor at Nagoya University in Japan. His research primarily focuses on the electrical characterization and diffusion properties of semi-insulating GaN and its applications in high-performance electronic devices. Recent publications include investigations into the effects of metal impurities and the development of dual-layer substrates for enhanced material properties. Prof. Iso's work contributes significantly to the field of semiconductor materials and device technology.

Articles (7)

Year:

2025

Year:

2024

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2020

Collaborators (1)

Jun Suda

Nagoya University

JAPAN

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Kenji Iso

Research Interests

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Articles (7)

Diffusion of Acceptor Metal Impurities from Semi‐Insulating GaN into Undoped GaN Epitaxial Layers

Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy

Dual‐Layer Semi‐Insulating GaN Substrates Doped with Fe, C, or Mn

Dual‐Layer Semi‐Insulating GaN Substrates Doped with Fe, C, or Mn

Reverse Leakage Mechanism of Dislocation-Free GaN Vertical p-n Diodes

Comparative study of electrical properties of semi-insulating GaN substrates grown by hydride vapor phase epitaxy and doped with Fe, C, or Mn

High quality GaN crystal grown by hydride vapor-phase epitaxy on SCAATTM

Collaborators (1)

Jun Suda

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