Jun Suda

Nagoya University

Japan

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Articles (20)

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2024

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2024

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2024

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2024

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2023

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2023

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2023

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2023

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2023

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2023

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2023

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2023

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2022

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2022

Collaborators (9)

Kazuyoshi Tomita

Designated Professor

Nagoya University

JAPAN

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Hajime Tanaka

Assistant Professor

Osaka University

JAPAN

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Hiroshi Amano

Nagoya University

JAPAN

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Kenji Iso

Designated professor

Nagoya University

JAPAN

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Masahiro Horita

Associate Professor

Nagoya University

JAPAN

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Shizuo Fujita

Kyoto University

JAPAN

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Takeshi Kimura

Tohoku University

JAPAN

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Michal Bockowski

Professor

Institute of High Pressure Physics

POLAND

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Kazutaka Kanegae

Kyoto Institute of Technology

JAPAN

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Jun Suda

Research Interests

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Articles (20)

Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping

Influence of fixed charges and trapped electrons on free electron mobility at 4H-SiC(0001)/SiO2 interfaces with gate oxides annealed in NO or POCl3

Electrical Characterization of AlGaN/GaN-HEMTs on Semi-Insulating GaN Substrates Doped With Fe, C, or Mn and Grown by Hydride Vapor Phase Epitaxy

Suppression of threshold voltage shift due to positive bias stress in GaN planar MOSFETs by post-deposition annealing

Improvement of AlSiO/GaN interface by a novel post deposition annealing using ultra high pressure

Nitrogen-displacement-related recombination centers generated by electron beam irradiation in n-type and p-type homoepitaxial GaN layers

Record high electron mobilities in high-purity GaN by eliminating C-induced mobility collapse

Improved Turn-On Voltage Controllability in AlGaN/GaN Gated-Anode Diodes Using Etch Endpoint Detection Layer

Improvement of Gate Length Dependence in Electrical Characteristics of AlGaN/GaN Dual-Gate HEMTs

Study on the Impact of Mg-Channeled Implantation on Junction Termination Extension for GaN Vertical Power Devices Using TCAD Simulation

Comparative study of electrical properties of semi-insulating GaN substrates grown by hydride vapor phase epitaxy and doped with Fe, C, or Mn

High Hall electron mobility in the inversion layer of 4H-SiC (0001)/SiO2 interfaces annealed in POCl3

Correlation between non-ionizing energy loss and production rate of electron trap at EC − (0.12–0.20) eV formed in gallium nitride by various types of radiation

Prospects of mist CVD for fabrication of β-Ga2O3 MESFETs on β-Ga2O3 (010) substrates

Design and fabrication of vertical GaN junction barrier Schottky rectifiers using Mg ion implantation

Effects of proton irradiation-induced point defects on Shockley–Read–Hall recombination lifetimes in homoepitaxial GaN p–n junctions

Effect of H2 addition on growth rate and surface morphology of GaN(0001) grown by halide-vapor-phase epitaxy using GaCl3

Comparison of switching performance of high-speed GaN vertical MOSFETs with various gate structures based on TCAD simulation

Depth profiling of E C – 0.26 eV electron traps introduced in homoepitaxial n-type GaN by ultra-low-dose Si-ion implantation and subsequent annealing

Mg-implanted vertical GaN junction barrier Schottky rectifiers with low on resistance, low turn-on voltage, and nearly ideal nondestructive breakdown voltage

Collaborators (9)

Kazuyoshi Tomita

Hajime Tanaka

Hiroshi Amano

Kenji Iso

Masahiro Horita

Shizuo Fujita

Takeshi Kimura

Michal Bockowski

Kazutaka Kanegae

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