Kentaro Kaneko

Full-professor

Ritsumeikan University

Japan

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Professor Kentaro Kaneko is a Full Professor at Ritsumeikan University in Japan. His research focuses on advanced materials for electronics, particularly in the areas of α-Ga 2 O 3 and its growth methods, including mist chemical vapor deposition. Recent publications include studies on deep traps in α-Ga 2 O 3 and the thermal stability of various oxide films.

Articles (7)

Year:

2021

Year:

2021

Year:

2021

Year:

2021

Year:

2020

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JAPAN

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Kentaro Kaneko

Research Interests

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Contact this professor

About

Articles (7)

Thermal stability of α-(AlxGa1–x)2O3 films grown on c-plane sapphire substrates with an Al composition up to 90%

Analysis of Deep Traps in Mist Chemical Vapor Deposition-Grown n-Type α-Ga<inf>2</inf>O<inf>3</inf> by Photocapacitance Method

Initial nucleation scheme of Ga<inf>2</inf>O<inf>3</inf>on (0001) sapphire by mist CVD for the growth of α-phase

Ultra-wide bandgap corundum-structured p-type α-(Ir,Ga)<inf>2</inf>O<inf>3</inf>alloys for α-Ga<inf>2</inf>O<inf>3</inf>electronics

Thermal stability of α-Ga2O3 films grown on c-plane sapphire substrates via mist-CVD

Impact of hydrochloric acid on the epitaxial growth of In<inf>2</inf>O<inf>3</inf>films on (0001)α-Al<inf>2</inf>O<inf>3</inf>substrates by mist CVD

Synthesis of high-quality α-Ga<inf>2</inf>O<inf>3</inf>thin films on sapphire substrates with introduction of buffer layers

Collaborators (5)

Riena Jinno

Takanori Kiguchi

Mitsunobu Sato

Yuichi Ota

Shizuo Fujita

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