Riena Jinno

Assistant Professor/Ph.D.

University of Tokyo

Japan

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Riena Jinno is an Assistant Professor at the University of Tokyo, Japan. Her research areas include strain relaxation in Al-rich oxides, anisotropic dielectric functions in α-(AlxGa1−x)2O3, and the thermal stability of Ga2O3 semiconductor thin films. She has contributed to various studies on the optical and structural properties of these materials through advanced epitaxial techniques.

Articles (10)

Year:

2025

Year:

2022

Year:

2022

Year:

2022

Year:

2021

Year:

2021

Year:

2021

Year:

2021

Year:

2021

Year:

2020

Collaborators (8)

Mathias Schubert

University of Nebraska - Lincoln

UNITED STATES

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Kentaro Kaneko

Full-professor

Ritsumeikan University

JAPAN

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Shizuo Fujita

Kyoto University

JAPAN

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YongJin Cho

Cornell University

UNITED STATES

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hironori okumura

Assistant Professor

University of Tsukuba

JAPAN

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Megan Stokey

Assistant Professor

Milwaukee School of Engineering

UNITED STATES

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Rafal Korlacki

University of Nebraska - Lincoln

UNITED STATES

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UFUK KILIC

Research Assistant Professor

University of Nebraska - Lincoln

UNITED STATES

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Riena Jinno

Research Interests

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About

Articles (10)

Strain Relaxation of Al‐Rich α‐(AlGa)2O3 and α‐Al2O3/Ga2O3 Superlattice on m‐Plane Sapphire Substrates by Plasma‐Assisted Molecular Beam Epitaxy

Anisotropic dielectric function, direction dependent bandgap energy, band order, and indirect to direct gap crossover in α-(AlxGa1−x)2O3 (≤x≤1)

Infrared-active phonon modes and static dielectric constants in α-(AlxGa1−x)2O3 (0.18 ≤ x ≤ 0.54) alloys

Prospects for phase engineering of semi-stable Ga2O3 semiconductor thin films using mist chemical vapor deposition

High-frequency and below bandgap anisotropic dielectric constants in α-(AlxGa1−x)2O3 (≤x≤1)

Thermal stability of epitaxial α-Ga2O3 and (Al,Ga)2O3 layers on m-plane sapphire

Thermal stability of α-(AlxGa1–x)2O3 films grown on c-plane sapphire substrates with an Al composition up to 90%

Anisotropic dielectric functions, band-to-band transitions, and critical points in α -Ga2O3

Crystal orientation dictated epitaxy of ultrawide-bandgap 5.4- to 8.6-eV α-(AlGa)2O3 on m-plane sapphire

Thermal stability of α-Ga2O3 films grown on c-plane sapphire substrates via mist-CVD

Collaborators (8)

Mathias Schubert

Kentaro Kaneko

Shizuo Fujita

YongJin Cho

hironori okumura

Megan Stokey

Rafal Korlacki

UFUK KILIC

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