M. E. Zvanut

Investigation of intrinsic defects such as gallium vacancies (VGa) and their interactions with extrinsic defects like Fe in β-Ga2O3 is crucial for the development of devices. Photoinduced electron paramagnetic resonance (photo-EPR) experiments are performed at room temperature and 30 K by illuminating neutron irradiated Fe-doped and unintentionally doped β-Ga2O3 crystals with LEDs from 0.7 to 4.7 eV, and interactions between VGa and other defects such as Fe are investigated. 30 K measurements indicate small photoinduced changes in the amount of VGa2−, but the photothreshold suggests little or no interaction with Fe. Rather, the decrease of VGa2− is accompanied by the emergence of self-trapped holes (STHs), indicating that the stability of the STH is critical to the VGa2− optical transition. We suggest the decrease of VGa2− is due to excitation of electrons from valence band maximum to the defect. The resulting hole is captured at an oxygen atom to form STH. By performing a systematic photo-EPR study of gallium vacancies, we show that the intrinsic defect, VGa, does not interact with extrinsic defects, Fe or Ir. Instead, VGa contributes to the stability of the STH.