YongJin Cho

Cornell University

United States

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Articles (12)

Year:

2024

Year:

2023

Year:

2023

Year:

2023

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2022

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2022

Year:

2022

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2022

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Collaborators (12)

Mathias Schubert

University of Nebraska - Lincoln

UNITED STATES

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Debdeep Jena

Professor

Cornell University

UNITED STATES

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Riena Jinno

Assistant Professor/Ph.D.

University of Tokyo

JAPAN

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David Muller

Cornell University

UNITED STATES

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Celesta Chang

Assistant Professor

Seoul National University

SOUTH KOREA

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Tetsuya Tohei

Associate Professor

Osaka University

JAPAN

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Megan Stokey

Assistant Professor

Milwaukee School of Engineering

UNITED STATES

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Huili Xing

Professor

Cornell University

UNITED STATES

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M. E. Zvanut

The University of Alabama

UNITED STATES

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Rafal Korlacki

University of Nebraska - Lincoln

UNITED STATES

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UFUK KILIC

Research Assistant Professor

University of Nebraska - Lincoln

UNITED STATES

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Hideto Miyake

Professor

Mie university

JAPAN

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YongJin Cho

Research Interests

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Articles (12)

Polarization-induced two-dimensional hole gases in N-polar AlGaN/GaN heterostructures

Excitonic and deep-level emission from N- and Al-polar homoepitaxial AlN grown by molecular beam epitaxy

AlN/AlGaN/AlN quantum well channel HEMTs

An electron paramagnetic resonance study of the electron transport in heavily Si-doped high Al content AlxGa1−xN

Anisotropic dielectric function, direction dependent bandgap energy, band order, and indirect to direct gap crossover in α-(AlxGa1−x)2O3 (≤x≤1)

Infrared-active phonon modes and static dielectric constants in α-(AlxGa1−x)2O3 (0.18 ≤ x ≤ 0.54) alloys

Transport properties of polarization-induced 2D electron gases in epitaxial AlScN/GaN heterojunctions

Molecular beam homoepitaxy of N-polar AlN: Enabling role of aluminum-assisted surface cleaning

Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates

High-density polarization-induced 2D electron gases in N-polar pseudomorphic undoped GaN/Al0.85Ga0.15N heterostructures on single-crystal AlN substrates

Controlled Si doping of β -Ga2O3 by molecular beam epitaxy

N-polar GaN p-n junction diodes with low ideality factors

Collaborators (12)

Mathias Schubert

Debdeep Jena

Riena Jinno

David Muller

Celesta Chang

Tetsuya Tohei

Megan Stokey

Huili Xing

M. E. Zvanut

Rafal Korlacki

UFUK KILIC

Hideto Miyake

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