Markus Pristovsek

Professor

Nagoya University

Japan

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Markus Pristovsek is a Professor at Nagoya University in Japan. His research focuses on the optimization of light-emitting diodes, with recent publications exploring topics such as external quantum efficiency in InGaN-based micro-LEDs and the growth of high internal quantum efficiency semipolar GaN-based devices. He has also investigated the role of sidewall conditions and carrier localization in micro-light-emitting diode technology.

Articles (21)

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2025

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2022

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2022

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2021

Collaborators (5)

Tae-Yeon Seong

Professor/Depart chair

Korea University

SOUTH KOREA

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Hiroshi Amano

Nagoya University

JAPAN

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Pietro Pampili

Nagoya University

JAPAN

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Matthew Smith

Trainer, Researcher

University of Bristol

UNITED KINGDOM

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Jia Wang

YLC Designated Assistant Professor

Nagoya University

JAPAN

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Markus Pristovsek

Research Interests

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About

Articles (21)

Role of Sidewall Conditions in the External Quantum Efficiency of InGaN‐Based Micro‐LEDs

SiN interlayer to improve external quantum efficiency and reduce sidewall recombination for blue (micro) light-emitting diodes

Recent advances in micro-pixel light emitting diode technology

Droop and light extraction of InGaN-based red micro-light-emitting diodes

Discovering the incorporation limits for wurtzite AlPyN1−y grown on GaN by metalorganic vapor phase epitaxy

Two-Dimensional Electron Gas in Thin N-Polar GaN Channels on AlN on Sapphire Templates

How to Make Semi‐Polar InGaN Light Emitting Diodes with High Internal Quantum Efficiency: The Importance of the Internal Field

Nitrogen-polar growth of AlN on vicinal (0001) sapphire by MOVPE

InGaN-based blue and red micro-LEDs: Impact of carrier localization

Growth and Characterization of High Internal Quantum Efficiency Semipolar (101̅3) GaN-Based Light Emitting Diodes

Impact of graphene state on the orientation of III–nitride

Growth of N-Polar (0001) GaN in Metal–Organic Vapour Phase Epitaxy on Sapphire

Stress relaxation of AlGaN on nonpolar m-plane GaN substrate

Impact of Sidewall Conditions on Internal Quantum Efficiency and Light Extraction Efficiency of Micro‐LEDs

2D-GaN/AlN Multiple Quantum Disks/Quantum Well Heterostructures for High-Power Electron-Beam Pumped UVC Emitters

Red emission from InGaN active layer grown on nanoscale InGaN pseudosubstrates

Direct Determination of the Internal Quantum Efficiency of Light‐Emitting Diodes

Anisotropic hole transport along [0001] and [112¯0] direction in p-doped (101¯0) GaN

Wurtzite Al1−xGaxPyN1−y barrier layer growth for high electron mobility transistors

Understanding indium incorporation of InGaN grown on polar, semi-polar, and non-polar orientation by metal–organic vapor phase epitaxy

The Effect of Interface Diffusion on Raman Spectra of Wurtzite Short-Period GaN/AlN Superlattices

Collaborators (5)

Tae-Yeon Seong

Hiroshi Amano

Pietro Pampili

Matthew Smith

Jia Wang

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