Hiroshi Amano

Nagoya University

Japan

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Articles (21)

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2024

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Collaborators (6)

Jun Suda

Nagoya University

JAPAN

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Tae-Yeon Seong

Professor/Depart chair

Korea University

SOUTH KOREA

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Tomoaki Nishimura

Professor

Hosei University

JAPAN

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Kazuki Ohnishi

Designated Assistant Professor

JAPAN

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Markus Pristovsek

Professor

Nagoya University

JAPAN

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Jia Wang

YLC Designated Assistant Professor

Nagoya University

JAPAN

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Hiroshi Amano

Research Interests

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Articles (21)

Improving the Barrier Height of N-Polar GaN Schottky Diodes Using Mg-Diffusion Process

Recent advances in micro-pixel light emitting diode technology

Improving the Barrier Height of N-Polar GaN Schottky Diodes Using Mg-Diffusion Process

Hole transport mechanism at high temperatures in p-GaN/AlGaN/GaN heterostructure

Impact of unintentionally formed compositionally graded layer on carrier injection efficiency in AlGaN-based deep-ultraviolet laser diodes

Impurity reduction in lightly doped n-type gallium nitride layer grown via halogen-free vapor-phase epitaxy

Demonstration of AlGaN-on-AlN p-n Diodes With Dopant-Free Distributed Polarization Doping

Lateral p-type GaN Schottky barrier diode with annealed Mg ohmic contact layer demonstrating ideal current–voltage characteristic

Impact of graphene state on the orientation of III–nitride

Stress relaxation of AlGaN on nonpolar m-plane GaN substrate

Simultaneous light emission and detection of an AlGaInP quantum well diode

Anisotropic hole transport along [0001] and [112¯0] direction in p-doped (101¯0) GaN

Electron lifetime and diffusion coefficient in dopant-free p-type distributed polarization doped AlGaN

Using low-temperature growth to resolve the composition pulling effect of UV-C LEDs

Multiplexing of bias-controlled modulation modes on a monolithic III-nitride optoelectronic chip

Interplay of sidewall damage and light extraction efficiency of micro-LEDs

Photon extraction enhancement of praseodymium ions in gallium nitride nanopillars

High In content nitride sub-micrometer platelet arrays for long wavelength optical applications

Ohmic Contact to p-Type GaN Enabled by Post-Growth Diffusion of Magnesium

High-Gain Gated Lateral Power Bipolar Junction Transistor

Non-polar true-lateral GaN power diodes on foreign substrates

Collaborators (6)

Jun Suda

Tae-Yeon Seong

Tomoaki Nishimura

Kazuki Ohnishi

Markus Pristovsek

Jia Wang

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