Markus Weyers

Department Head

Ferdinand-Braun-Institut Leibniz-Institut für Höchstfrequenztechnik

Germany

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Markus Weyers is the Department Head at the Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik in Germany. His research primarily focuses on the analysis and optimization of light-emitting diodes, including far-ultraviolet C emitters and their material properties. Recent articles authored by him explore topics such as dislocation density in AlN templates, defect-selective etching, and the effects of doping on GaN structures.

Articles (11)

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2025

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2024

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2024

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2024

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2022

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2022

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2022

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2022

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2022

Year:

2022

Leibniz University Hannover

GERMANY

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Markus Weyers

Research Interests

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Articles (11)

Analysis of the External Quantum Efficiency of 233 nm Far‐Ultraviolet‐C‐Light Emitting Diodes with Distributed Polarization Doped p‐AlGaN‐Layers

Origin of the parasitic luminescence of 235 nm UVC LEDs grown on different AlN templates

Spatial correlation of defect-selective etching and dark luminescence spots in Al x Ga1−x N

226 nm Far‐Ultraviolet‐C Light Emitting Diodes with an Emission Power over 2 mW

Impact of operation parameters on the degradation of 233 nm AlGaN-based far-UVC LEDs

Passively Q-switched microchip laser based picosecond light source in the visible-red to near-infrared band for semiconductor excitation

Fingerprints of carbon defects in vibrational spectra of GaN considering the isotope effect

Fingerprints of carbon defects in vibrational spectra of GaN considering the isotope effect

The optimal threading dislocation density of AlN template for micrometer-thick Al0.63Ga0.37N heteroepitaxy

The optimal threading dislocation density of AlN template for micrometer-thick Al0.63Ga0.37N heteroepitaxy

Impact of Si doping on dislocation behavior in MOVPE-grown AlN on high-temperature annealed AlN buffer layers

Collaborators (8)

Gordon Schmidt

Markus R. Wagner

Luca Sulmoni

Martin Guttmann

Tim Wernicke

Michael Kneissl

Jörg Neumann

Dietmar Kracht

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