Michael Kneissl

Technische Universität Berlin

Germany

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Articles (20)

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2025

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2022

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2021

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2021

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2021

Collaborators (12)

Markus Weyers

Department Head

Ferdinand-Braun-Institut Leibniz-Institut für Höchstfrequenztechnik

GERMANY

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Francesco Piva

University of Padua

ITALY

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Gunnar Kusch

UNITED KINGDOM

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Igor Prozheev

University of Helsinki

FINLAND

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Luca Sulmoni

Technische Universität Berlin

GERMANY

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Martin Guttmann

Ferdinand-Braun-Institut gGmbH

GERMANY

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Tim Wernicke

Technische Universität Berlin

GERMANY

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Michael Bergmann

Chalmers University of Technology

SWEDEN

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Yoichi Kawakami

Professor

Kyoto University

JAPAN

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Christian Kuhn

Technische Universität Berlin

GERMANY

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Robert Martin

University Of Strathclyde

UNITED KINGDOM

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Bernd Witzigmann

Friedrich-Alexander Universität Erlangen-Nürnberg

GERMANY

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Michael Kneissl

Research Interests

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Articles (20)

Analysis of the External Quantum Efficiency of 233 nm Far‐Ultraviolet‐C‐Light Emitting Diodes with Distributed Polarization Doped p‐AlGaN‐Layers

Short-range order controlled amphoteric behavior of the Si dopant in Al-rich AlGaN

Effect of quantum well number on the efficiency and degradation of AlGaN-based far-UVC LEDs emitting at 233 nm and 226 nm

Light Extraction and External Quantum Efficiency of 235 nm Far–Ultraviolet‐C Light‐Emitting Diodes on Single‐Crystal AlN Substrates

Modeling of the Electrical Characteristics and Degradation Mechanisms of UV-C LEDs

Unraveling carrier distribution in far-UVC LEDs by temperature-dependent electroluminescence measurements

Optical Gain in AlGaN Quantum Wells: Impact of Higher Energy States

Carrier Transport in a Deep Ultraviolet Mixed Quantum Well Light Emitting Diode

Simulation of Carrier Injection Efficiency in AlGaN-Based UV-Light-Emitting Diodes

Radiative and Nonradiative Recombination Processes in AlGaN Quantum Wells on Epitaxially Laterally Overgrown AlN/Sapphire from 10 to 500 K

Degradation of AlGaN-based UV-C SQW LEDs analyzed by means of capacitance deep-level transient spectroscopy and numerical simulations

Strain induced power enhancement of far-UVC LEDs on high temperature annealed AlN templates

234 nm far-ultraviolet-C light-emitting diodes with polarization-doped hole injection layer

The influence of threading dislocations propagating through an AlGaN UVC LED

Picosecond-laser-excited photoluminescence study of AlGaN quantum wells on epitaxially laterally overgrown AlN/sapphire under selective and non-selective excitation conditions

Electrical properties and microstructure of V/Al/Ni/Au contacts on n-Al0.65Ga0.35N:Si with different Au thicknesses and annealing temperatures

Light extraction efficiency and internal quantum efficiency of fully UVC-transparent AlGaN based LEDs

Electrical and optical characteristics of highly transparent MOVPE-grown AlGaN-based tunnel heterojunction LEDs emitting at 232 nm

Origin of defect luminescence in ultraviolet emitting AlGaN diode structures

A 310 nm Optically Pumped AlGaN Vertical-Cavity Surface-Emitting Laser

Collaborators (12)

Markus Weyers

Francesco Piva

Gunnar Kusch

Igor Prozheev

Luca Sulmoni

Martin Guttmann

Tim Wernicke

Michael Bergmann

Yoichi Kawakami

Christian Kuhn

Robert Martin

Bernd Witzigmann

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