Masaaki Tanaka

Professor

University of Tokyo

Japan

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Professor Masaaki Tanaka is a faculty member at The University of Tokyo, Japan. His research focuses on the magnetotransport properties of ferromagnetic semiconductors and explores advanced materials such as altermagnets and strained thin films. Recent publications highlight his contributions to topics including epitaxial growth techniques, spintronics, and the mechanisms of enhanced ferromagnetism in various semiconductor systems.

Articles (20)

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2025

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2025

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2025

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2025

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2025

We investigate the magnetic properties of La2/3Sr1/3MnO3 (LSMO) membranes released from an SrTiO3 (STO) substrate by selectively etching an Sr4Al2O7 sacrificial buffer layer. The magnetic moment and Curie temperatures (TC) of the released LSMO membranes improve significantly over their substrate-bound counterparts. We attribute these enhancements to suppressing strain and oxygen octahedral rotations that are present in substrate-bound films. Moreover, comparing the magnetic hysteresis loops obtained with magnetic fields applied along several crystallographic orientations demonstrates enhanced (weakened) perpendicular (in-plane) magnetic anisotropy in the released LSMO membranes. Our results contribute to potential applications of released LSMO membranes toward flexible spintronics devices, where high spin polarization and TC are desired.

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2024

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2024

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2024

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2024

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2024

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2023

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2023

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2023

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2023

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2023

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2022

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2022

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2022

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2022

Tokyo Institute of Technology

JAPAN

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Masaaki Tanaka

Research Interests

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About

Articles (20)

Epitaxial growth and transport properties of a metallic altermagnet CrSb on a GaAs (001) substrate

Very high Curie temperature (470–530 K) in (Ga,Fe)Sb ferromagnetic semiconductor grown by step-flow mode on vicinal GaAs substrates

Micromagnetic simulations for magnetic-field-free magnetization switching by spin–orbit torque in a perpendicularly magnetized (Ga,Mn)As single layer

Strained Fe-doped ferromagnetic semiconductor (In,Fe)As thin films grown on InP (001) substrates: Ferromagnetism and electronic structure

Giant Memory Function Based on the Magnetic Field History of Resistive Switching Under a Constant Bias Voltage

Reduced dead layers and magnetic anisotropy change in La2/3Sr1/3MnO3 membranes released from an SrTiO3 substrate

Spin injection and detection in a Si-based ferromagnetic tunnel junction: Theoretical model based on the band diagram and experimental demonstration

Large superconducting diode effect in ion-beam patterned Sn-based superconductor nanowire/topological Dirac semimetal planar heterostructures

Heavily Fe-doped quaternary-alloy ferromagnetic semiconductor (In,Ga,Fe)Sb

Mechanism of ferromagnetism enhancement in a La2/3Sr1/3MnO3 membrane released from epitaxial strain

Room-temperature spin injection from a ferromagnetic semiconductor

Origin of magnetically dead layers in spinel ferrites MFe2O4 grown on Al2O3 : Effects of postdeposition annealing studied by XMCD

Control of magnetic anisotropy by epitaxial strain in the n -type ferromagnetic semiconductor (In,Fe)Sb

Giant Spin‐Valve Effect in Planar Spin Devices Using an Artificially Implemented Nanolength Mott‐Insulator Region

Scattering-dependent transport of SrRuO3 films: From Weyl fermion transport to hump-like Hall effect anomaly

Development of magnetism in Fe-doped magnetic semiconductors: Resonant photoemission and x-ray magnetic circular dichroism studies of (Ga,Fe)As

Electron Spin Transport in a Metal-Oxide-Semiconductor Si Two-Dimensional Inversion Channel: Effect of Hydrogen Annealing on Spin-Scattering Mechanism and Spin Lifetime

Giant gate-controlled odd-parity magnetoresistance in one-dimensional channels with a magnetic proximity effect

Gate-controlled proximity magnetoresistance in In1−xGaxAs/(Ga,Fe)Sb bilayer heterostructures

Bias-dependent two-phase anisotropy in magnetoresistance of a GaMnAs-based magnetic tunnel junction

Collaborators (8)

Takahito Takeda

Ryosho Nakane

Munetoshi Seki

Hitoshi Tabata

Shinobu Ohya

Shoya Sakamoto

Atsushi Fujimori

NAM HAI PHAM

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