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Masashi Kato

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Nagoya Institute of Technology

Japan

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Recent Grants

Grant: Close

単結晶評価を利用した半導体光触媒の効率制限因子の解明

Open Date: 2015-04-01

Close Date: 2017-03-31

Grant: Close

高品質・低抵抗SiC結晶の実現

Open Date: 2013-04-01

Close Date: 2017-03-31

Grant: Close

水素発生オリエンテッドエピ構造3C-SiCによる高効率水素発生光触媒の実現

Open Date: 2013-04-01

Close Date: 2015-03-31

Grant: Close

Quantitative observation of surface recombination velocities for 4H-SiC

Open Date: 2013-04-01

Close Date: 2016-03-31

Grant: Close

Realization of non-dislocation SiC crystal

Open Date: 2011-04-01

Close Date: 2014-03-31

Articles (20)

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Collaborators (3)

TOMOHISA KATO

National Institute of Advanced Industrial Science and Technology

JAPAN

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Yasuyoshi Kurokawa

Professor

Kansai University

JAPAN

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Kazuki Shimazoe

Assistant Professor

Nagoya Institute of Technology

JAPAN

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Masashi Kato

Research Interests

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Recent Grants

Articles (20)

Mitigation of bipolar degradation in 4H-SiC power devices using engineered SiC substrates

Optimization of ion implantation for suppressing stacking fault expansion in 4H-SiC

Growth and Structural Properties of GeO2 on Free-Standing Cubic 3C-SiC Substrates via Mist Chemical Vapor Deposition

Polytype evaluation in 3C-SiC/4H-SiC stacked epilayers on trenched 4H-SiC substrates using Raman spectroscopy

Rutile-Structured GeO2 Thin Films Grown on Various Planes of α-Al2O3 Substrates with Graded GexSn1–xO2 Buffer Layers

Hydrogen and point defect introduction into 4H-SiC by plasma treatment

Focused light birefringence for three-dimensional observation of dislocations in silicon carbide wafers

Auger recombination coefficient in heavily nitrogen-doped 4H-SiC under high-level injection conditions

Difference between the Si- and C-faces in channeling Al ion implantation along the direction in 4H-SiC

Bulk and surface recombination of carriers in SiC and related wide band gap semiconductor materials

Observation of point defect and carrier lifetime distributions in hydrogen or helium ion implanted SiC PiN diodes for suppression of bipolar degradation

Controlled Domain in 3C-SiC Epitaxial Growth on Off-oriented 4H-SiC Substrates for Improvement of Photocathode Performance

Charge carrier recombination in TiO2 and SrTiO3 single crystals: Impact of CoOx cocatalyst loading

Suppression of stacking-fault expansion in 4H-SiC diodes by helium implantation

Aluminum channeling in 4H-SiC by high-energy implantation above 10 MeV

Analysis of defects dominating carrier recombination in CeO<sub>2</sub> single crystal for photocatalytic applications

Carrier recombination in highly Al doped 4H-SiC: dependence on the injection conditions

Effect of dislocations on carrier recombination and photoelectrochemical activity in polished and unpolished TiO<sub>2</sub> and SrTiO<sub>3</sub> crystals

Effects of proton implantation for expansion of basal plane dislocations in SiC toward suppression of bipolar degradation: review and perspective

Effects of proton implantation into 4H-SiC substrate: Stacking faults in epilayer on the substrate

Collaborators (3)

TOMOHISA KATO

Yasuyoshi Kurokawa

Kazuki Shimazoe

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