TOMOHISA KATO

National Institute of Advanced Industrial Science and Technology

Japan

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Articles (10)

Year:

2025

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2025

Year:

2025

Year:

2024

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2024

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2024

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2024

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2024

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2024

Year:

2023

Collaborators (2)

Hitoshi Umezawa

National Institute of Advanced Industrial Science and Technology

JAPAN

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Kazuma Eto

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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TOMOHISA KATO

Research Interests

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Articles (10)

Correlation between variable-range hopping conduction and lattice strain in heavily Al-doped 4H-SiC epilayers

Temperature-dependent Hall mobility in heavily Al-doped 4H-SiC grown by chemical vapor deposition

Focused light birefringence for three-dimensional observation of dislocations in silicon carbide wafers

P-Channel HFET Utilizing 2D Hole Gas in Si-Face 3C/4H-SiC Heterostructure

SiC-based high electron mobility transistor

<i>Ab Initio</i> Molecular Dynamics Approach for Oxidation of SiC Surface in Contact with Aqueous H<sub>2</sub>O<sub>2</sub> Solutions

Propagation behaviour of threading screw dislocations during 4H-SiC crystal growth using a hybrid method combined with solution growth and physical vapour transport growth on high-off-angle seeds

Suppression of SiC Inclusions in 4H-SiC Crystals Grown from Si-Cr-C-Based Solution Saturated with SiC

Surface recombination velocities for 4H-SiC: Dependence of excited carrier concentration and surface passivation

Comparison of temperature-dependent resistivity of heavily Al- and N-codoped 4H-SiC grown by physical vapor transport and heavily Al-doped 4H-SiC grown by chemical vapor deposition

Collaborators (2)

Hitoshi Umezawa

Kazuma Eto

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