Minpeng Liang

In recent years, phase‐change materials have gained importance in nanophotonics and optoelectronics. Sizable optical contrast and added degree of freedom from phase switching drive the use of phase‐change materials in various optical devices with outstanding results and potential for real‐world applications. The local crystallization/amorphization of phase‐change materials and the corresponding reflectance tuning by the crystallized/amorphized region size have potential applications, for example, for future dynamic display devices. Although the resolution is much higher than in current display devices, the pixel sizes in those devices are limited by the locally switchable structure size. Here, the spot sizes are further reduced by using ion beams instead of laser beams, dramatically increasing pixel density, demonstrating superior resolution. In addition, the power to sputter away materials can be utilized in creating nanostructures with relative height differences and local contrast. The experiment focuses on one archetypal phase‐change material, Sb 2 Se 3 , prepared by pulsed‐laser deposition on a reflective gold substrate. This study demonstrates that structural colors can be produced and reflectance tuning can be achieved by focused ion beam milling/sputtering of phase‐change materials at the nanoscale. Furthermore, the local structuring of phase‐change materials by focused ion beam can produce high‐pixel‐density display devices with superior resolutions.