Oliver Hilt

Head of Wide-Bandgap Electronics Department

Germany

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Oliver Hilt is the Head of the Wide-Bandgap Electronics Department at Ferdinand-Braun-Institut in Germany. His research interests include GaN HEMT epitaxial layers, β-Ga2O3 MOSFET devices, and the analysis of phonon-plasmon coupled modes in vertical power structures. He has contributed to advancements in gate dielectrics for GaN-based devices and the monolithic integration of transistors.

Articles (18)

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2025

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2024

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2024

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2023

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2023

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2022

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2022

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2021

Collaborators (4)

Sibylle Dieckerhoff

Technische Universität Berlin

GERMANY

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Jos Boschker

Ferdinand-Braun-Institut gGmbH

GERMANY

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Kornelius Tetzner

Ferdinand-Braun-Institut Leibniz-Institut für Höchstfrequenztechnik

GERMANY

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Ta-Shun Chou

Leibniz Institute for Crystal Growth

GERMANY

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Oliver Hilt

Research Interests

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About

Articles (18)

Effective control of active interface traps in GaN HEMT epitaxial layers by stress tuning of SiN x passivation layers

4 A/300 V Switching of Lateral β-Ga2O3 MOSFET Devices

Phonon–plasmon coupled modes in GaN vertical power structures: Carrier concentration and mobility analysis

Plasma enhanced atomic layer deposition of HfO2—A potential gate dielectric for GaN-based devices

Characteristics and Operation of a Monolithic Bidirectional GaN-on-AlN/SiC Power Transistor Employing Dual-Gate

All-implanted lateral β-Ga2O3 MOSFET devices realized on semi-insulating (-201) β-Ga2O3 substrates

Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices

Vertical GaN Trench MOSFETs With HfO2 / Al2O3 Layered Gate Dielectric

Si-implantation for low ohmic contact resistances in RF GaN HEMTs

Experimental Investigation of GaN-on-AlN/SiC Transistors With Regard to Monolithic Integration

1.17 GW/cm² AlN-Based GaN-Channel HEMTs on Mono-Crystalline AlN Substrate

Investigation of atomic layer deposition methods of Al2O3 on n-GaN

Low-resistive gate module for RF GaN-HFETs by electroplating

Optimization of Vertical GaN Drift Region Layers for Avalanche and Punch-Through Pn-Diodes

Effects of post metallization annealing on Al2O3 atomic layer deposition on n-GaN

GaN-Based Multichip Half-Bridge Power Module Integrated on High-Voltage AlN Ceramic Substrate

Isolation properties and failure mechanisms of vertical Pt / n-GaN SBDs

On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs

Collaborators (4)

Sibylle Dieckerhoff

Jos Boschker

Kornelius Tetzner

Ta-Shun Chou

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