Kornelius Tetzner

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Ferdinand-Braun-Institut Leibniz-Institut für Höchstfrequenztechnik

Germany

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Flexible Complementary Hybrid Integrated Circuits

Open Date: 2015-09-01

Close Date: 2017-09-01

Articles (13)

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2025

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2025

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2025

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2023

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2023

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2023

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2023

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2023

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2022

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2022

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2022

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2022

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2021

Collaborators (5)

Matteo Meneghini

University of Padova

ITALY

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Oliver Hilt

Head of Wide-Bandgap Electronics Department

GERMANY

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Ta-Shun Chou

Leibniz Institute for Crystal Growth

GERMANY

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Gaudenzio Meneghesso

Full Professor

University of Padua

ITALY

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Zbigniew Galazka

Leibniz Institute for Crystal Growth

GERMANY

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Kornelius Tetzner

Research Interests

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Recent Grants

Articles (13)

4 A/300 V Switching of Lateral β-Ga2O3 MOSFET Devices

All-implanted lateral β-Ga2O3 MOSFET devices realized on semi-insulating (-201) β-Ga2O3 substrates

Out‐Diffusion and Uphill‐Diffusion of Mg in Czochralski‐Grown (100) β‐Ga2O3 Under High‐Temperature Annealing and Its Influence on Lateral MOSFET Devices

Gate leakage modeling in lateral β -Ga2O3 MOSFETs with Al2O3 gate dielectric

Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing

Enhancement-mode vertical (100) β-Ga2O3 FinFETs with an average breakdown strength of 2.7 MV cm−1

High-mobility 4 μm MOVPE-grown (100) β-Ga2O3 film by parasitic particles suppression

Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β -Ga2O3 films for vertical device application

Refractory metal-based ohmic contacts on β -Ga2O3 using TiW

Logarithmic trapping and detrapping in β -Ga2O3 MOSFETs: Experimental analysis and modeling

SnO/β-Ga2O3 heterojunction field-effect transistors and vertical p–n diodes

Planar refractive index patterning through microcontact photo-thermal annealing of a printable organic/inorganic hybrid material

On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs

Collaborators (5)

Matteo Meneghini

Oliver Hilt

Ta-Shun Chou

Gaudenzio Meneghesso

Zbigniew Galazka

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