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Peide D. Ye

Purdue University

United States

Research Interests

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Articles (21)

Collaborators (5)

Mengwei Si

Associate Professor

Shanghai Jiao Tong University

Gang Qiu

Assistant Professor

University of Minnesota

UNITED STATES

Haitong Li

Assistant Professor

Purdue University

UNITED STATES

Chang Niu

Assistant Professor

National University of Singapore (NUS)

Thomas Beechem

Associate Professor

Purdue University

UNITED STATES

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Peide D. Ye

Research Interests

Make your next move.

Explore related searches

Articles (21)

Collaborators (5)

Mengwei Si

Gang Qiu

Haitong Li

Chang Niu

Thomas Beechem

Make your next move.

Peide D. Ye

Research Interests

Make your next move.

Explore related searches

Articles (21)

Monolayer MoS2 Sensors for Probing the Self-Heating Effect in Indium Tin Oxide Nanoelectronics

Circular ratchet currents in two dimensional tellurene with an asymmetric grating

A Unified Mechanism for Strain- and Anneal-Induced Oxygen-Vacancy Behavior in Oxide Semiconductors

Gate-tunable giant negative magnetoresistance in tellurene driven by quantum geometry

Thickness Scaling and Roughness-Induced Mobility Cliff in Ultra-Thin-Body MOSFETs

Breakdown of Ohm’s Law by Disorders in Low-Dimensional Transistors

Characterization of Thermal Stability and Unexpected Mobility Enhancement in IGZO FETs Measured Up to 750 °C

Non-reciprocal magnetoresistances in chiral tellurium

Contact Length Scaling in In2O3 and InGaZnO FETs: Critical Roles of Quantum Confinement and Indium Concentration Tuning

Universality of Subthreshold Slope and Defect Characterization in Thin Body Transistors

Device–Circuit–System Co-Design of Reconfigurable Oxide-Semiconductor 2T Non-Volatile Gain-Cell Memory and Sandwich-3D LLM Accelerator

Experimental Investigation of Variations in Polycrystalline Hf0.5Zr0.5O2 (HZO)-Based MFIM

Engineering Amorphous IGZO Thin-Film Transistors: The Role of Composition and Channel Thickness in Mobility-Threshold Voltage Optimization

Distinguishing the Different Vth Shift Mechanisms in In₂O₃ TFTs Using Ultrafast On-the-Fly Reliability Measurements

Quantum Geometry and the Electric Magnetochiral Anisotropy in Noncentrosymmetric Polar Media

Advanced characterization of density-of-states over wide bandgap-energy in p-type Cu2O TFTs by multiple-wavelength light source

InGaZnO4 and In2O3 Mobility Trend: The Role of Structural Disorder from Amorphous to Crystalline States

Comprehensive Study of Low-Frequency Noise Origins in Scaled Atomic-Layer-Deposited IGZO TFTs

Analytical Modeling of Short-Channel Effects in BEOL-Compatible Thin-Film Transistors

Ultralow Voltage Operation of p‐ and n‐FETs Enabled by Self‐Formed Gate Dielectric and Metal Contacts on 2D Tellurium

Surface Accumulation Induced Negative Schottky Barrier and Ultralow Contact Resistance in Atomic-Layer-Deposited In<sub>2</sub>O<sub>3</sub> Thin-Film Transistors

Collaborators (5)

Mengwei Si

Gang Qiu

Haitong Li

Chang Niu

Thomas Beechem

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