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Mengwei Si

Associate Professor

Shanghai Jiao Tong University

China

Research Interests

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Articles (20)

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2026

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2023

Collaborators (7)

Han Wang

University of Southern California

UNITED STATES

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Yuhao Zhang

Virginia Polytechnic Institute and State University

UNITED STATES

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Jie Zhang

University of Michigan

UNITED STATES

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Jingquan Liu

Professor

Shanghai Jiao Tong University

CHINA

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Peide D. Ye

Purdue University

UNITED STATES

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Wei Tang

Associate Professor

Shanghai Jiao Tong University

CHINA

View details

Yuhao Zhang

Virginia Polytechnic Institute and State University

UNITED STATES

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ApplyKite TwinLearns as you apply

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Mengwei Si

Research Interests

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Articles (20)

Dielectric Deposition Enhanced Crystallization in Atomic-Layer-Deposited Indium Oxide Transistors Achieving High Gate-Hall Mobility Exceeding 100 cm2/V $\cdot $ s at Room Temperature

The Ballistic Injection in IGZO GAA VFET With Scaled Source/Drain Extension and Its Impact on On-Current Enhancement

Boosting ALD In2O3 Transistor Performance Using Hybrid H2O and O3 Co-Reactant

Ferroelectric Field Effect Transistor With Annealing-Free Ultralow Process Temperature (250 °C) of Hf x Zr1-x O2 for BEOL Application

Hidden structural phase transition assisted ferroelectric domain orientation engineering in Hf0.5Zr0.5O2 films

Nonvolatile bidirectional photoresponse in a fully CMOS-compatible FeFET for in-sensor computing

Heterogeneous Integration of Ultra-Wide Bandgap Semiconductors for Radio Frequency Power Devices

Gallium oxide/indium gallium zinc oxide heterojunction Schottky barrier thin-film transistors with ultrahigh 2D electron density over 6 × 1013/cm2

Back-End-of-Line Compatible 2T1C Memory Cell With InGaZnO Thin-Film Transistors and Hf₀.₅Zr₀.₅O₂-Based Ferroelectric Capacitors

Impact of Channel Material, Interface Quality, and Polarization on Memory Window of Interfacial Layer-Free FeFET With Oxide Semiconductor

On the Accurate Evaluation of Intrinsic Electron Mobility on Oxide Semiconductor Transistors

Surface Accumulation Induced Negative Schottky Barrier and Ultralow Contact Resistance in Atomic-Layer-Deposited In<sub>2</sub>O<sub>3</sub> Thin-Film Transistors

CMOS Logic and Capacitorless DRAM by Stacked Oxide Semiconductor and Poly-Si Transistors for Monolithic 3-D Integration

Review—Extremely Thin Amorphous Indium Oxide Transistors

A metastable temperature-strain phase diagram of HfxZr1−xO2 thin films based on synchrotron-based in situ 2D GIXRD investigation

Area- and Power-Efficient Compute-in-Memory Macro Based on Oxide Semiconductor 2T0C eDRAM With Cell-System Co-Optimization

Can Interface Layer be Really Free for HfxZr1-x O2 Based Ferroelectric Field-Effect Transistors With Oxide Semiconductor Channel?

Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In2O3 FETs Toward Monolithic 3-D Integration

The Impact of Intrinsic RC Coupling With Domains Flipping on Polarization Switching Time of Hf0.5Zr0.5O2 Ferroelectric Capacitor

Correlation between crystal phase composition, wake-up effect, and endurance performance in ferroelectric HfxZr1−xO2 thin films

Collaborators (7)

Han Wang

Yuhao Zhang

Jie Zhang

Jingquan Liu

Peide D. Ye

Wei Tang

Yuhao Zhang

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