Raymond Hueting

Ass. professor

University of Twente

Netherlands

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Raymond Hueting is an Assistant Professor at the University of Twente in the Netherlands. His research areas include power electronics, semiconductor devices, and materials characterization, with recent articles focusing on SiC power modules, insulated gate bipolar transistors, and GaN-on-Si HEMTs. He explores the performance of various semiconductor technologies and the reliability of electrical connections in high-power applications.

Articles (20)

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2025

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2020

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2020

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2020

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2020

Collaborators (5)

Anne-Johan Annema

Professor at University of Twente

University of Twente

NETHERLANDS

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Erwin J.W. Berenschot

University of Twente

NETHERLANDS

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Gert Rietveld

Prof. dr. ir. at University of Twente

University of Twente

NETHERLANDS

View details

Shivakumar D Thammaiah

Aalborg University

DENMARK

View details

Jurriaan Schmitz

Prof. at University of Twente

University of Twente

NETHERLANDS

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Raymond Hueting

Research Interests

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About

Articles (20)

A New Silicon Accumulation-Mode Trench Bidirectional Switch

Electrical and 850 nm Optical Characterization of Back-Gate Controlled 22 nm FDSOI PIN-Diodes Without Front-Gate

Design and Fabrication of a Ceramic Substrate-Embedded SiC Power Module

Impact of the collector structure on the performance of the insulated gate bipolar transistor

A Double-Sided Cooling SiC Power Module with Pressure Contact Packaging

Behavior of Split-Gate Trench MOSFETs in Critical Conditions Caused by Distributed Effects

Impact of Defects on the Low-Field Electron Mobility in GaN-on-Si HEMTs

Thermal Shock Reliability of Silver-Sintered Bonding of Metal-Plated Aluminum Surfaces

Ruggedness of Silicon Power MOSFETs–Part II: Device Design Failures and Modeling: A Review

Opportunities and Challenges of Pressure Contact Packaging for Wide Bandgap Power Modules

Ruggedness of Silicon Power MOSFETs—Part I: Cell Structure Design Related Failure: A Review

Vertical silicon nanowedge formation by repetitive dry and wet anisotropic etching combined with 3D self-aligned sidewall nanopatterning

Review of Topside Interconnections for Wide Bandgap Power Semiconductor Packaging

Avalanche-Mode Si Light-Emitting Transistor for Narrow-Band Emission Near 760 nm

Electrical TCAD Study of the Low-Voltage Avalanche-Mode Superjunction LED

Interface States Characterization of UTB SOI MOSFETs From the Subthreshold Current

Investigation of Pd/MoOx/n-Si diodes for bipolar transistor and light-emitting device applications

On the Accuracy of the Cox–Strack Equation and Method for Contact Resistivity Determination

Electron-hole bilayer light-emitting device

Epitaxial growth of full range of compositions of (1 1 1) PbZr1- xTixO3 on GaN

Collaborators (5)

Anne-Johan Annema

Erwin J.W. Berenschot

Gert Rietveld

Shivakumar D Thammaiah

Jurriaan Schmitz

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