Roberto Fornari

Full professor

University of Parma

Italy

Research Interests

Explore related searches

Professors in Italy

Contact this professor

Get a free first email built on one of their papers, ready for you to edit and send yourself.

About

Roberto Fornari is a Full Professor at the University of Parma, Italy. His research primarily focuses on the deposition and properties of gallium oxide films, as evidenced by his recent articles on metal-organic chemical vapor deposition and the performance of various heterojunctions and photodiodes. He is also engaged in studies regarding the optical and electrical characterization of gallium oxide layers and their applications in solar cell technology.

Articles (23)

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2025

Year:

2024

Year:

2024

Year:

2024

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2022

Collaborators (8)

Danilo Bersani

University of Parma

ITALY

View details

Antonella Parisini

Professor

University of Parma

ITALY

View details

Markus R. Wagner

Technische Universität Berlin

GERMANY

View details

Piero Mazzolini

Paul-Drude-Institut fur Festkorperelektronik

GERMANY

View details

Luigi Cristofolini

Professor

University of Parma

ITALY

View details

Maura Pavesi

Professor

University of Parma

ITALY

View details

Alessio Bosio

University of Parma

ITALY

View details

Donato Spoltore

Technische Universität Dresden

GERMANY

View details

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Roberto Fornari

Research Interests

Explore related searches

Contact this professor

About

Articles (23)

Single-phase κ-Ga2O3 films deposited by metal-organic chemical vapor deposition on GaAs and ternary BxGa(1-x)As templates

Single-phase x-Ga2O3 films deposited by metal-organic chemical vapor deposition on GaAs and ternary BxGa(1-x)As templates

Effect of Heterojunction Characteristics and Deep Electronic Levels on the Performance of (Cd,Zn)S/Sb2Se3 Solar Cells

Effects of the Interface Properties on the Performance of UV-C Photoresistors: Gallium Oxide as Case Study

Photo-capacitance measurement in dual-frequency mode and its application to study of Pt/κ-Ga2O3 planar Schottky diode

Assessment of Trapping Phenomena in As-Grown and Thermally-Treated Si-Doped κ-Ga<sub>2</sub>O<sub>3</sub> Layers via Optical Admittance Spectroscopy

Effect of lithium diffusion into Ga2O3 thin films

Self-powered NiO/κ-Ga<sub>2</sub>O<sub>3</sub> heterojunction photodiode for fast broadband ultraviolet (UV) radiation detection

Tetravalent element doping of β-Ga<sub>2</sub>O<sub>3</sub> films grown by pulsed electron deposition technique

Physical Properties of an Efficient MAPbBr3/GaAs Hybrid Heterostructure for Visible/Near-Infrared Detectors

Raman Spectroscopy as an Effective Tool for Assessment of Structural Quality and Polymorphism of Gallium Oxide (Ga2O3) Thin Films

Structural and Photoelectronic Properties of κ-Ga2O3 Thin Films Grown on Polycrystalline Diamond Substrates

Silane‐Mediated Expansion of Domains in Si‐Doped κ‐Ga2O3 Epitaxy and its Impact on the In‐Plane Electronic Conduction

High-throughput and cost-effective method for production of high-quality semi-insulating InP substrates

Atomic structure and annealing-induced reordering of ε-Ga2O3: A Rutherford backscattering/channeling and spectroscopic ellipsometry study

Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers

Sb2Se3 Polycrystalline Thin Films Grown on Different Window Layers

Innovative back-contact for Sb<sub>2</sub>Se<sub>3</sub>-based thin film solar cells

Innovative back-contact for Sb2Se3-based thin film solar cells

Orthorhombic undoped κ-Ga2O3 epitaxial thin films for sensitive, fast, and stable direct X-ray detectors

Silane-Mediated Expansion of Domains in Si-Doped kappa-Ga2O3 Epitaxy and its Impact on the In-Plane Electronic Conduction

Atomic structure and annealing-induced reordering of ε-Ga<sub>2</sub>O<sub>3</sub>: A Rutherford backscattering/channeling and spectroscopic ellipsometry study

Electronic properties and photo-gain of UV-C photodetectors based on high-resistivity orthorhombic κ-Ga2O3 epilayers

Collaborators (8)

Danilo Bersani

Antonella Parisini

Markus R. Wagner

Piero Mazzolini

Luigi Cristofolini

Maura Pavesi

Alessio Bosio

Donato Spoltore

Make your next move.