Roger Stark

Head of Test Laboratory

Switzerland

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Roger Stark is the Head of Test Laboratory at SwissSEM Technologies AG in Switzerland. His research primarily focuses on the electrical characteristics and reliability of Silicon Carbide (SiC) Power MOSFETs, as demonstrated in his recent articles on topics such as gate resistance, irradiation effects, and capacitance measurements. His work contributes significantly to the understanding and advancement of power semiconductor technologies.

Articles (11)

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2024

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2023

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2023

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2023

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2022

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2022

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2022

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2022

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2021

Year:

2021

Year:

2020

Collaborators (1)

Arto Javanainen

FINLAND

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Roger Stark

Research Interests

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Articles (11)

Frequency-Dependent Internal Gate Resistance of SiC Power MOSFETs

High-Energy Proton and Atmospheric-Neutron Irradiations of SiC Power MOSFETs: SEB Study and Impact on Channel and Drift Resistances

Temperature Dependence of the Channel and Drift Resistance of SiC Power MOSFETs Extracted from I-V and C-V Measurements

Small-Signal Impedance and Split C-V Characterization of High-κ SiC Power MOSFETs

Fast Defect Mapping at the SiO<sub>2</sub>/ SiC Interface Using Confocal Photoluminescence

Sensitivity of D<sub>it</sub> Extraction at the SiO<sub>2</sub>/SiC Interface Using Quasi-Static Capacitance-Voltage Measurements

Temperature Dependence of On-State Inter-Terminal Capacitances (C<sub>gd</sub> and C<sub>gs</sub>) of SiC MOSFETs and Frequency Limitations of their Measurements

Gate Characterization of Silicon Carbide and Silicon Power MOSFETs revisited

Accuracy of Three Interterminal Capacitance Models for SiC Power MOSFETs Under Fast Switching

Impact of Terrestrial Neutrons on the Reliability of SiC VD-MOSFET Technologies

4H-SiC Power VDMOSFET Manufacturing Utilizing POCl<sub>3</sub> Post Oxidation Annealing

Collaborators (1)

Arto Javanainen

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