Satoshi Hamaguchi

Professor

Osaka University

Japan

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Professor Satoshi Hamaguchi is a faculty member at Osaka University in Japan. His research focuses on plasma physics and applications, particularly in plasma etching for microelectronics, reactive species in dielectric barrier discharges, and numerical simulations of plasmas. His recent publications include studies on etching characteristics of various materials and the impact of gas flow rates on reactive species.

Articles (20)

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2025

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2025

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2024

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2024

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2023

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2023

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2023

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2023

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2023

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2023

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2023

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2023

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2023

Collaborators (13)

Kenzo Ibano

JAPAN

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Hae June Lee

Professor

Pusan National University

SOUTH KOREA

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Andrew Gibson

Junior Professor

Ruhr-Universität Bochum

GERMANY

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Zoltan Donko

HUNGARY

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Stephen Wu

Project assistant professor

The Institute of Statistical Mathematics

JAPAN

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Remi DUSSART

FRANCE

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穫草場

Project Assistant Professor

National Institute for Fusion Science

JAPAN

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Jane Chang

Professor

University of California, Los Angeles

UNITED STATES

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Masanaga Fukasawa

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Uwe Czarnetzki

Professor Dr.

Ruhr-Universität Bochum

GERMANY

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Enggar Alfianto

Osaka University

JAPAN

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David Barry Graves

Professor

Princeton University

UNITED STATES

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Ali Mesbah

Associate Professor

University of California, Berkeley

UNITED STATES

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Satoshi Hamaguchi

Research Interests

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Articles (20)

Numerical simulation of chemical reactions in phosphate-buffered saline (PBS) exposed to helium pulsed plasmas at atmospheric pressure

Etching characteristics of tungsten and tungsten compounds by energetic fluorocarbon and argon ions

Influence of gas flow rate on modes of reactive oxygen and nitrogen species in a grid-type surface dielectric barrier discharge

Etching characteristics of aluminum oxide and Inconel 600 Ni-based alloy by energetic fluorine and chlorine ion beams

Etching and fluorination of yttrium oxide (Y2O3) irradiated with fluorine ions or radicals

Self-consistent calculation of the optical emission spectrum of an argon capacitively coupled plasma based on the coupling of particle simulation with a collisional-radiative model

Machine learning-based prediction of the electron energy distribution function and electron density of argon plasma from the optical emission spectra

Future of plasma etching for microelectronics: Challenges and opportunities

Amine plasma polymers deposited on porous hydroxyapatite artificial bone with bipolar pulsed discharges

Etch-stop mechanisms in plasma-enhanced atomic layer etching of silicon nitride: A molecular dynamics study

Science-based, data-driven developments in plasma processing for material synthesis and device-integration technologies

Spectroscopic analysis improvement using convolutional neural networks

Spectroscopic analysis improvement using convolutional neural networks

Global numerical simulation of chemical reactions in phosphate-buffered saline (PBS) exposed to atmospheric-pressure plasmas

High-throughput SiN ALE: surface reaction and ion-induced damage generation mechanisms

High-throughput SiN ALE: surface reaction and ion-induced damage generation mechanisms

Inert-gas ion scattering at grazing incidence on smooth and rough Si and SiO2 surfaces

Molecular dynamics study of SiO2 nanohole etching by fluorocarbon ions

Foundations of machine learning for low-temperature plasmas: methods and case studies

Foundations of machine learning for low-temperature plasmas: methods and case studies

Collaborators (13)

Kenzo Ibano

Hae June Lee

Andrew Gibson

Zoltan Donko

Stephen Wu

Remi DUSSART

穫 草場

Jane Chang

Masanaga Fukasawa

Uwe Czarnetzki

Enggar Alfianto

David Barry Graves

Ali Mesbah

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穫草場