David Barry Graves

Professor

Princeton University

United States

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David Barry Graves is a Professor at Princeton University in the United States. His research areas include plasma-surface interactions, atomic layer etching, and the modeling of nucleation and growth of particles, as evidenced by his recent publications. His work employs advanced molecular dynamics simulations to explore phase transitions in nanoclusters and the etching processes of various materials.

Articles (13)

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2025

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2025

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2025

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2024

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2024

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2024

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2024

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2024

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2024

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2023

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2023

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2023

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2022

Collaborators (4)

Steven Shannon

Professor

North Carolina State University

UNITED STATES

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Satoshi Hamaguchi

Professor

Osaka University

JAPAN

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Jane Chang

Professor

University of California, Los Angeles

UNITED STATES

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Ali Mesbah

Associate Professor

University of California, Berkeley

UNITED STATES

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David Barry Graves

Research Interests

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Articles (13)

The importance of accounting for the Tolman correction to surface tension for nucleation and growth modeling of Fe clusters

Size-dependent second-order-like phase transitions in Fe nanocluster melting from low-temperature structural isomerization

Deep potential molecular dynamics simulations of low-temperature plasma-surface interactions

Science challenges and research opportunities for plasma applications in microelectronics

Atomic Scale Etching of Diamond: Insights from Molecular Dynamics Simulations

High-accuracy method for modeling nucleation and growth of particles

A transient site balance model for atomic layer etching

Reactor wall effects in Si–Cl2–Ar atomic layer etching

An examination of the performance of molecular dynamics force fields: Silicon and silicon dioxide reactive ion etching

Foundations of machine learning for low-temperature plasmas: methods and case studies

Dynamics of plasma atomic layer etching: Molecular dynamics simulations and optical emission spectroscopy

Near-surface damage and mixing in Si-Cl2-Ar atomic layer etching processes: Insights from molecular dynamics simulations

Modification of a force field for molecular dynamics simulations of silicon etching by chlorine atoms

Collaborators (4)

Steven Shannon

Satoshi Hamaguchi

Jane Chang

Ali Mesbah

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