Shih-Nan Hsiao

Prof.

Nagoya University

Japan

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Articles (17)

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2024

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2024

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2024

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2024

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2024

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2024

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2023

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2023

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2023

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2023

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2023

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2023

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2023

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2022

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2021

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2021

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2020

Collaborators (3)

Tsutsumi Takayoshi

Nagoya University

JAPAN

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Masaru Hori

JAPAN

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Thi-Thuy-Nga Nguyen

Designated assistant professor

Nagoya University

JAPAN

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Shih-Nan Hsiao

Research Interests

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Articles (17)

Selective removal of single-layer graphene over double-layer graphene on SiO2 by remote oxygen plasma irradiation

Nonhalogen Dry Etching of Metal Carbide TiAlC by Low-Pressure N2/H2 Plasma at Room Temperature

Optical actinometry for number density measurements in low-pressure plasmas: Advantages, error sources, and method validation

Oxidation-induced surface stress on texture development of thin films: The (001) FePt case

Pseudo‐Wet Plasma Mechanism Enabling High‐Throughput Dry Etching of SiO2 by Cryogenic‐Assisted Surface Reactions

Surface sulfurization of amorphous carbon films in the chemistry of oxygen plasma added with SO2 or OCS for high-aspect-ratio etching

Bias-supply timing tailored to the aspect ratio dependence of silicon trench etching in Ar plasma with alternately injected C4F8 and SF6

In Situ Monitoring of Etching Characteristic and Surface Reactions in Atomic Layer Etching of SiN Using Cyclic CF4/H2 and H2 Plasmas

Diagnostics of a nanosecond atmospheric plasma jet. Ionization waves, plasma density and electric field dynamics

Manipulation of etch selectivity of silicon nitride over silicon dioxide to a-carbon by controlling substate temperature with a CF4/H2 plasma

Etching Mechanism Based on Hydrogen Fluoride Interactions with Hydrogenated SiN Films Using HF/H2 and CF4/H2 Plasmas

High-Power Impulse Magnetron Sputter-Deposited Chromium-Based Coatings for Corrosion Protection

An approach to reduce surface charging with cryogenic plasma etching using hydrogen-fluoride contained gases

Low‐temperature reduction of SnO2 by floating wire‐assisted medium‐pressure H2/Ar plasma

On the Etching Mechanism of Highly Hydrogenated SiN Films by CF<sub>4</sub>/D<sub>2</sub> Plasma: Comparison with CF<sub>4</sub>/H<sub>2</sub>

Effects of hydrogen content in films on the etching of LPCVD and PECVD SiN films using CF4/H2 plasma at different substrate temperatures

Influences of substrate temperatures on etch rates of PECVD-SiN thin films with a CF4/H2 plasma

Collaborators (3)

Tsutsumi Takayoshi

Masaru Hori

Thi-Thuy-Nga Nguyen

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