Shin-ichi Nishizawa

Kyushu University

Japan

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Articles (15)

Year:

2024

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2024

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2024

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2024

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2024

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2023

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2023

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2022

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2022

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2022

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2022

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2021

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2021

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2021

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2020

Collaborators (5)

Katsuhiro Hata

University of Tokyo

JAPAN

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Sankara Narayanan Ekkanath Madathil

University of Sheffield

UNITED KINGDOM

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Wataru Saito

Prof.

Kyushu University

JAPAN

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Keiji Wada

University of Tokyo

JAPAN

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Makoto Takamiya

University of Tokyo

JAPAN

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Shin-ichi Nishizawa

Research Interests

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Articles (15)

Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping

Impact of p-Gate Contact in GaN-HEMTs on Overvoltage Stress Failure

Study on stress in trench structures during silicon IGBTs process-oxidation

Estimating of IGBT Bond Wire Lift-Off Trend Using Convolutional Neural Network (CNN)

Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping

Adjustable Current Limiting Function With a Monolithically Integrated SiC Circuit Breaker Device

IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control

Unclamped Inductive Switching Robustness of SiC Devices With Parallel-Connected Varistor

Scaling Design Effects on Surface Buffer IGBT Characteristics

Zoomed Response Surface Method for Automatic Design in Parameters Optimization of Low-Voltage Power MOSFET

Nitrogen-Doped Czochralski Silicon Wafers as Materials for Conventional and Scaled Insulated Gate Bipolar Transistors

Turn-off dV/dt controllability in 1.2kV MOS-bipolar devices

Simulation Study on Dual Gate Control of Surface Buffer Insulated Gate Bipolar Transistor for High Switching Controllability

Slit Field Plate Power MOSFET for Improvement of Figure-Of-Merits

Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor

Collaborators (5)

Katsuhiro Hata

Sankara Narayanan Ekkanath Madathil

Wataru Saito

Keiji Wada

Makoto Takamiya

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