Wataru Saito

Prof.

Kyushu University

Japan

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About

Wataru Saito is a Professor at Kyushu University in Japan. His research focuses on power electronics, specifically the performance and reliability of GaN-HEMTs and IGBTs, as well as modeling techniques for semiconductor devices. Recent articles highlight his work on overvoltage failure processes and the effects of substrate bias on device performance.

Articles (21)

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2021

Collaborators (5)

Katsuhiro Hata

University of Tokyo

JAPAN

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Shin-ichi Nishizawa

Kyushu University

JAPAN

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Keiji Wada

University of Tokyo

JAPAN

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Ruizhe Zhang

Virginia Polytechnic Institute and State University

UNITED STATES

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Makoto Takamiya

University of Tokyo

JAPAN

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Wataru Saito

Research Interests

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About

Articles (21)

Effect of Substrate Bias in Ohmic p-Gate GaN-HEMTs on Unclamped Inductive Switching Capability

A Warpage Prediction Model for Trench Field-Plate Power MOSFET in 300mm-Diameter Process

Demonstration of superior UIS robustness of 3300 V scaled IGBT by non-proportional scaling methods

Impact of p-Gate Contact in GaN-HEMTs on Overvoltage Stress Failure

Study on stress in trench structures during silicon IGBTs process-oxidation

Estimating of IGBT Bond Wire Lift-Off Trend Using Convolutional Neural Network (CNN)

Paralleled SiC MOSFETs Circuit Breaker With a SiC MPS Diode for Avalanche Voltage Clamping

Robust reverse bias safe operating area and improved electrical performance in 3300 V non-proportionally scaled insulated gate bipolar transistors

Turn-off switching voltage surge analysis with dependence on IGBT cell design

Overvoltage Failure Process of Cascode GaN Field Effect Transistors

A Future Outlook of Power Devices From the Viewpoint of Power Electronics Trends

Adjustable Current Limiting Function With a Monolithically Integrated SiC Circuit Breaker Device

Large-Current Output Digital Gate Driver for 6500 V, 1000 A IGBT Module to Reduce Switching Loss and Collector Current Overshoot

Stability, Reliability, and Robustness of GaN Power Devices: A Review

Automatic total performance design of low-voltage power MOSFETs using zoomed response surface method

Degradation and Recovery of GaN HEMTs in Overvoltage Hard Switching Near Breakdown Voltage

IGBT Power Module Design for Suppressing Gate Voltage Spike at Digital Gate Control

Unclamped Inductive Switching Robustness of SiC Devices With Parallel-Connected Varistor

Scaling Design Effects on Surface Buffer IGBT Characteristics

Zoomed Response Surface Method for Automatic Design in Parameters Optimization of Low-Voltage Power MOSFET

Simulation Study on Dual Gate Control of Surface Buffer Insulated Gate Bipolar Transistor for High Switching Controllability

Collaborators (5)

Katsuhiro Hata

Shin-ichi Nishizawa

Keiji Wada

Ruizhe Zhang

Makoto Takamiya

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