Takeshi Mitani

National Institute of Advanced Industrial Science and Technology (AIST)

Japan

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Articles (10)

Year:

2024

Year:

2024

Year:

2023

Year:

2021

Year:

2021

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2020

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2020

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2020

Year:

2020

Year:

2020

Collaborators (4)

Sakiko Kawanishi

Kyoto University

JAPAN

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Hideharu Matsuura

Professor

Osaka Electro-Communication University

JAPAN

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Yuji Matsumoto

Tohoku University

JAPAN

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Kazuma Eto

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Takeshi Mitani

Research Interests

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Articles (10)

Propagation behaviour of threading screw dislocations during 4H-SiC crystal growth using a hybrid method combined with solution growth and physical vapour transport growth on high-off-angle seeds

Suppression of SiC Inclusions in 4H-SiC Crystals Grown from Si–Cr–C-Based Solution Saturated with SiC

Quantification of nitrogen in heavily doped silicon carbide by soft X-ray emission spectroscopy

Massive reduction of threading screw dislocations in 4H-SiC crystals grown by a hybrid method combined with solution growth and physical vapor transport growth on higher off-angle substrates

Reduction of threading screw dislocations in 4H-SiC crystals by a hybrid method with solution growth and physical vapor transport growth

Corrigendum: “Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC” [Jpn. J. Appl. Phys. 59, 051004 (2020)]

Platinum additive impacts on vapor-liquid-solid growth chemical interface for high-quality SiC single crystal films

Sign of Hall coefficient in nearest-neighbor hopping conduction in heavily Al-doped p-type 4H-SiC

Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC

Formation of Double Shockley Stacking Faults in Heavily Nitrogen Doped 4H-SiC Crystal with Reduction of Residual Stress around Scratch Damage

Collaborators (4)

Sakiko Kawanishi

Hideharu Matsuura

Yuji Matsumoto

Kazuma Eto

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