Kazuma Eto

National Institute of Advanced Industrial Science and Technology (AIST)

Japan

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Articles (9)

Year:

2025

Year:

2025

Year:

2024

Year:

2023

Year:

2023

Year:

2023

Year:

2022

Year:

2020

Year:

2020

Collaborators (4)

TOMOHISA KATO

National Institute of Advanced Industrial Science and Technology

JAPAN

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Takeshi Mitani

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Yuuki Ishida

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

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Hideharu Matsuura

Professor

Osaka Electro-Communication University

JAPAN

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Kazuma Eto

Research Interests

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Articles (9)

Correlation between variable-range hopping conduction and lattice strain in heavily Al-doped 4H-SiC epilayers

Temperature-dependent Hall mobility in heavily Al-doped 4H-SiC grown by chemical vapor deposition

Propagation behaviour of threading screw dislocations during 4H-SiC crystal growth using a hybrid method combined with solution growth and physical vapour transport growth on high-off-angle seeds

Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals

Negative Hall coefficient in band conduction region in heavily Al-doped 4H-SiC

Comparison of temperature-dependent resistivity of heavily Al- and N-codoped 4H-SiC grown by physical vapor transport and heavily Al-doped 4H-SiC grown by chemical vapor deposition

Photoluminescence wavelength from stacking fault with complicated structure in 4H-SiC epitaxial layer

Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC

Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region

Collaborators (4)

TOMOHISA KATO

Takeshi Mitani

Yuuki Ishida

Hideharu Matsuura

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