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Kazuma Eto

National Institute of Advanced Industrial Science and Technology (AIST)

Japan

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Research Interests

Materials Chemistry

20%

Solid Mechanics

10%

Semiconductor Physics

60%

Silicon Carbide

30%

Grain Boundary

20%

Electron-phonon Interaction

20%

Solid-state Electronics

20%

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Articles9

Correlation between variable-range hopping conduction and lattice strain in heavily Al-doped 4H-SiC epilayers

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Year:

2025

Temperature-dependent Hall mobility in heavily Al-doped 4H-SiC grown by chemical vapor deposition

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Year:

2025

Propagation behaviour of threading screw dislocations during 4H-SiC crystal growth using a hybrid method combined with solution growth and physical vapour transport growth on high-off-angle seeds

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Year:

2024

Characterization of partial dislocations for (3, 3, 4), (3, 3, 3, 3), and (3, 3, 2, 2, 4) stacking faults in 4H-SiC crystals

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Year:

2023

Negative Hall coefficient in band conduction region in heavily Al-doped 4H-SiC

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Year:

2023

Comparison of temperature-dependent resistivity of heavily Al- and N-codoped 4H-SiC grown by physical vapor transport and heavily Al-doped 4H-SiC grown by chemical vapor deposition

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Year:

2023

Photoluminescence wavelength from stacking fault with complicated structure in 4H-SiC epitaxial layer

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Year:

2022

Anomalous Conduction between the Band and Nearest-Neighbor Hopping Conduction Regions in Heavily Al-Doped p-Type 4H-SiC

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Year:

2020

Anomalous Temperature Dependence of the Hall Coefficient of Heavily Al-Doped 4H-SiC Epilayers in the Band Conduction Region

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Year:

2020

Collaborators4

TOMOHISA KATO

National Institute of Advanced Industrial Science and Technology

JAPAN

Takeshi Mitani

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

Yuuki Ishida

National Institute of Advanced Industrial Science and Technology (AIST)

JAPAN

Hideharu Matsuura

Professor

Osaka Electro-Communication University

JAPAN

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