Tibor Grasser

Professor

TU Wien

Austria

Research Interests

Explore related searches

Professors in Austria

Contact this professor

Get a free first email built on one of their papers, ready for you to edit and send yourself.

Articles (18)

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2024

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2022

Collaborators (7)

Florian Honz

AIT Austrian Institute of Technology GmbH

AUSTRIA

View details

LAM PHAM

AIT Austrian Institute of Technology GmbH

AUSTRIA

View details

Bernhard Stampfer

TU Wien

AUSTRIA

View details

Theresia Knobloch

TU Wien

AUSTRIA

View details

Alexander Shluger

University College London

UNITED KINGDOM

View details

Benjamin Iñiguez

Full Professor

Universitat Rovira i Virgili

SPAIN

View details

François Lime

Associate Professor

SPAIN

View details

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Tibor Grasser

Research Interests

Explore related searches

Contact this professor

Articles (18)

Photonic Neuron with on Frequency-Domain ReLU Activation Function

Al–O–Al defect complexes as possible candidates for channel electron mobility reducing trapping centers in 4H-SiC metal–oxide–semiconductor field-effect transistors

Polaron formation in the hydrogenated amorphous silicon nitride Si3N4:H

Fluoride dielectrics for 2D transistors

A DLTS Study on Deep Trench Processing-Induced Trap States in Silicon Photodiodes

Extraction of Charge Trapping Kinetics of Defects From Single-Defect Measurements

Unified Charge Control Model for Back-Gated 2-D Field Effect Transistors

Gate Switching Instability in Silicon Carbide MOSFETs—Part II: Modeling

SOA-REAM Assisted Synaptic Receptor for Weighted-Sum Detection of Multiple Inputs

Revealing the Impact of Gate Area Scaling on Charge Trapping Employing SiO2Transistors

Over- and Undercoordinated Atoms as a Source of Electron and Hole Traps in Amorphous Silicon Nitride (a-Si3N4)

Machine learning interatomic potential for silicon-nitride (Si3N4) by active learning

Editorial Special Issue on Dielectrics for 2-D Electronics

Electrically stimulated optical spectroscopy of interface defects in wide-bandgap field-effect transistors

Accurate Extraction of Minority Carrier Lifetimes—Part I: Transient Methods

Accurate Extraction of Minority Carrier Lifetimes—Part II: Combined I–V C–V Methods

Modeling 2D Material-Based Nanoelectronic Devices in the Presence of Defects

Challenges for Nanoscale CMOS Logic Based on Two-Dimensional Materials

Collaborators (7)

Florian Honz

LAM PHAM

Bernhard Stampfer

Theresia Knobloch

Alexander Shluger

Benjamin Iñiguez

François Lime

Make your next move.