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Tomoyuki TANIKAWA

Associate Professor

Osaka University

Japan

Research Interests

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Professors in Japan

About

Tomoyuki Tanikawa is an Associate Professor at The University of Osaka, Japan. His research focuses on the epitaxial growth of semiconductor materials and the characteristics of GaN-based laser diodes, including innovations in metalorganic vapor phase epitaxy and polarity inversion techniques. He has published recent articles exploring topics such as far-ultraviolet second harmonic generation and the operation of tunable single-mode lasers.

Articles (13)

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2026

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2025

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2025

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2024

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2024

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2024

Collaborators (7)

Yoshihiro Kangawa

Professor, Dr. Eng

Kyushu University

JAPAN

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Kanako Shojiki

講師 / Senior Lecturer/ Junior Associate Professor

Mie university

JAPAN

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Toru Akiyama

Mie university

JAPAN

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Ryuji Katayama

Professor

Osaka University

JAPAN

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Takahiro Kawamura

Associate Professor

Mie university

JAPAN

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Ryota Ishii

助教 / Assistant Professor

Kyoto University

JAPAN

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Takao Nakamura

Professor

Mie university

JAPAN

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Tomoyuki TANIKAWA

Research Interests

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About

Articles (13)

Development of waveguide-based far-ultraviolet wavelength conversion devices made of nitride semiconductor

Epitaxial Growth of AlGaN/AlN Strained-Layer Superlattices by Metalorganic Vapor Phase Epitaxy for Far-UV Second Harmonic Generation

Investigation of characteristics of GaN-based blue DFB laser diodes over a wide detuning range

Detuning dependence in current-light-output characteristics of GaN-based DFB laser diodes

Polarity inversion of GaN from +c to −c polarity by metalorganic vapor phase epitaxy

Polarity inversion of N-polar GaN by metalorganic vapor phase epitaxy via thermal oxidation

Analysis of inversion-domain boundaries in four-layer polarity-inverted AlN structure

First-principles structural analysis of polarity inversion boundaries in GaN

Second harmonic generation in horizontally aligned AlN/SiN x hybrid waveguide for integrated wavelength converter

Large Area Epitaxial Lateral Overgrowth of Semipolar (11¯$1 \left(\right. \macr \left.\right)$01) GaN Stripes on Patterned Si Substrates Prepared using Maskless Lithography

Metalorganic Vapor‐Phase Epitaxy of +c/−c GaN Polarity Inverted Bilayer for Transverse Quasi‐Phase‐Matched Wavelength Conversion Device

199 nm vacuum-ultraviolet second harmonic generation from SrB4O7 vertical microcavity pumped with picosecond laser

Continuous-wave operation of InGaN tunable single-mode laser with periodically slotted structure

Collaborators (7)

Yoshihiro Kangawa

Kanako Shojiki

Toru Akiyama

Ryuji Katayama

Takahiro Kawamura

Ryota Ishii

Takao Nakamura

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