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Toru Akiyama

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Mie university

Japan

Research Interests

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Professors in Japan Professors in Condensed Matter Physics Condensed Matter Physics professors in Japan

Recent Grants

Grant: Close

Bond engineering for quantum dot formation in nitride semiconductors

Open Date: 2019-04-01

Close Date: 2022-03-31

Grant: Close

Material design of group-IV alloy monolayers using bond engineering concept

Open Date: 2017-04-01

Close Date: 2020-03-31

Grant: Close

Computational mateipulationrials design for hetero-bond man

Open Date: 2016-06-30

Close Date: 2021-03-31

Grant: Close

Identification of diagnostic biomarker and novel fusion genes of bone and soft tissue sarcoma

Open Date: 2016-04-01

Close Date: 2021-03-31

Grant: Close

ボンドエンジニアリングによる量子ドット形成機構解明

Open Date: 2016-04-01

Close Date: 2019-03-31

Articles (20)

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Assistant Professor

Shimane University

JAPAN

View details

Hideto Miyake

Professor

Mie university

JAPAN

View details

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Toru Akiyama

Research Interests

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Recent Grants

Articles (20)

Chemical vapor deposition of compound semiconductors: process simulation and experimental validation

First-principles calculations of effective mass of impurity-doped Ga2O3

Structural stability of Ga2O3 polymorphs on α-Al2O3(0001) substrates: Insights from surface and interface energies

Computational analysis of 4H-SiC/SiO2 interfaces: atomic structure, electronic properties, and interfacial reaction kinetics

Adsorption behavior of adatoms on AlN(0001) surface with steps and kinks under metal-organic vapor-phase epitaxy condition: Ab initio study

Corrigendum: “First-principles study of excess Si transport in Si oxide on Si substrate using two-layer-oxide model for thermally oxidized interface” [Jpn. J. Appl. Phys. 65, 03SP18 (2026)]

First-principles study of excess Si transport in Si oxide on Si substrate using two-layer-oxide model for thermally oxidized interface

Theoretical analysis of 4H-SiC/SiO2 interface structures and band alignments: effects of NO annealing

Structures and Adsorption Behavior on N-Polar GaN(0001̅) Surface with Steps and Kinks: A DFT Study

Analysis of inversion-domain boundaries in four-layer polarity-inverted AlN structure

Sputter Epitaxy of Transition Metal Nitrides: Advances in Superconductors, Semiconductors, and Ferroelectrics

Computational Study for Structures and Electronic Properties of (RhAl)2O3 and (RhGa)2O3 Alloys for Optimal p‐Type Heterostructures in Group‐III Sesquioxides

Effects of Sc Composition and Lattice Constraint on Polarization Switching of ScxAl1−xN Alloys: A First‐Principles Study

Theoretical study on structural stability and miscibility of ScAlN alloys: effect of lattice constraint

Thermal conductivity of GaN with a vacancy and an oxygen point defect

First-principles structural analysis of polarity inversion boundaries in GaN

Structures and stability of reconstructed BAs surfaces: an ab initio-based approach

First-principles Study of Interstitial-Related Defects in Quartz

Advances in atomistic modeling for epitaxial growth of nitride semiconductors: a DFT-based approach

An Ab Initio Study for Oxygen Adsorption Behavior on Polar GaN Surfaces

Collaborators (17)

Atsushi Kobayashi

Yoshihiro Kangawa

Kenji Shiraishi

Akira Kusaba

Tomoyuki TANIKAWA

Kanako Shojiki

Motoaki Iwaya

Pawel Kempisty

Hiroyuki Kageshima

Ryuji Katayama

Tetsuo Hatakeyama

Takahiro Kawamura

Takuya Maeda

Takao Nakamura

S. Harada

Insung Seo

Hideto Miyake

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