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Vincent Goiffon

Full Professor

ISAE-SUPAERO

France

Research Interests

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Articles (36)

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Collaborators (4)

En Xia Zhang

Assistant Professor

University of Central Florida

UNITED STATES

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Fabio Acerbi

Fondazione Bruno Kessler

ITALY

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Antoine Salih Alj

Associate Professor

ISAE-SUPAERO

FRANCE

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Lucio Pancheri

Associate Professor

Università degli Studi di Torino

ITALY

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Vincent Goiffon

Research Interests

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Articles (36)

Infrared imagers with digital pixel ROICs for large charge handling capacity in MWIR and LWIR applications

Non-Linear Dark Current Behavior in CMOS Image Sensor

Total Ionizing Dose Effects on a PbS-CQD-Based CMOS Direct-Conversion X-Ray Image Sensor

Trapeze Active Deep Trench Designs for Enhanced Charge Transfer Performances in CCD-on-CMOS Image Sensor

Gamma-Ray Induced Displacement Damage in Silicon Microvolumes: Single Defect Generation Rate and Random Telegraph Signal

Low Temperature Proton Irradiation and Annealing Effects on Accumulation CCDs

Displacement Damage Effects on a CDTI-Based CCD-on-CMOS: Dark Current and Charge Transfer Inefficiency

Displacement Damage-Induced Dark Current and Random Telegraph Signal in p-Type Deep-Trench Pinned Photogates

In-Flight Hot Pixels and Random Telegraph Signal in Aeolus Accumulation CCDs Operated at Low Temperature

Characterization of Random Telegraph Signal in Neutron-Irradiated 150-nm CMOS SPADs

Comments by the Editors

Special NSREC 2024 Issue of the IEEE TRANSACTIONS ON NUCLEAR SCIENCE Editor Comments

Proton Radiation Effects on Low-Flux P-on-N Short-Wavelength Infrared HgCdTe Focal Plane Array

Single-Electron Quantization of Dark Current in Quanta Image Sensors

Analysis of High Gain Pinned Photodiodes Designs for Low Flux Imaging Applications

Influence of Electric Field on RTS Pixels in MCT FPA

Quanta Image Sensors for Space Applications

Radiation Effects in Quanta Image Sensors

Dark Current and Clock-Induced Charges in a Fully Depleted Charge Domain CDTI-Based CCD-on-CMOS Image Sensor

Radiation Damage on Silicon Photomultipliers from Ionizing and Non-Ionizing Radiation of Low-Earth Orbit Operations

Dark Current Random Telegraph Signal in Proton-Irradiated Single InGaAs Photodiodes

Effects of X-Ray and γ-Ray Irradiations on 2-D-Planar and 3-D-Stacked CMOS SPADs

Total Ionizing Dose Effects on a CDTI-Based CCD-on-CMOS Through Buildup of Interface Traps and Oxide Charges

Effect of Proton Energy and Bias Conditions During Irradiation on CMOS Single-Photon Avalanche Diodes

Impact of Irradiation Temperature, Doping, and Proton Energy on InGaAs Photodiodes

Toward the Development of High-Performance Direct Electron Detectors by Means of TCAD Simulations

Capacitive Deep Trench Isolation-Based CCD-on-CMOS Image Sensor Sensitivity to Total Ionizing Dose

Ionizing Radiation Effects on Hole Collection Backside-Illuminated p-Type Deep-Trench-Pinned Photo-MOS Pixels Under Image Acquisition

Proton Radiation-Induced Random Telegraph Signal in HgCdTe Photodiode Array

Design, Annealing, and Electric Field Effects on Proton and Gamma Irradiated MWIR HgCdTe Focal Plane Arrays

Electric Field-Enhanced Generation Current in Proton Irradiated InGaAs Photodiodes

Phosphosilicate Multimode Optical Fiber for Sensing and Diagnostics at Inertial Confinement Fusion Facilities

TCAD Calibration at Cryogenic Temperatures for CMOS Image Sensor Simulations

Hours-Long Transient Leakage Current in MOS Structures Induced by High Total-Ionizing-Dose

Probing Dark Current Random Telegraph Signal in a Small Pitch Vertically Pinned Photodiode CMOS Image Sensor After Proton Irradiation

Radiation-Induced Junction-Leakage Random-Telegraph-Signal

Collaborators (4)

En Xia Zhang

Fabio Acerbi

Antoine Salih Alj

Lucio Pancheri

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