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Vladimir Kaganer

Paul-Drude-Institut fur Festkorperelektronik

Germany

Research Interests

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Articles (12)

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2025

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2024

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2023

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2023

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2022

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2022

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2022

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2022

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2022

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2021

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2021

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2020

Collaborators (2)

Sergio Fernández Garrido

Associate Professor

Universidad Politécnica de Madrid

SPAIN

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Carsten Richter

Group Leader

Leibniz-Institut für Kristallzüchtung

GERMANY

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Vladimir Kaganer

Research Interests

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Articles (12)

Dislocation correlations in GaN epitaxial films revealed by EBSD and XRD

X-ray diffraction from dislocation half-loops in epitaxial films

A route for the top-down fabrication of ordered ultrathin GaN nanowires

X-ray scattering study of GaN nanowires grown on Ti/Al2O3 by molecular beam epitaxy

Nanoscale Mapping of the Full Strain Tensor, Rotation, and Composition in Partially Relaxed InxGa1−xN Layers by Scanning X-ray Diffraction Microscopy

Carrier Diffusion in GaN : A Cathodoluminescence Study. I. Temperature-Dependent Generation Volume

Carrier Diffusion in GaN : A Cathodoluminescence Study. II. Ambipolar versus Exciton Diffusion

Carrier Diffusion in GaN : A Cathodoluminescence Study. III. Nature of Nonradiative Recombination at Threading Dislocations

Cross-sectional shape evolution of GaN nanowires during molecular beam epitaxy growth on Si(111)

Resolution of a bent-crystal spectrometer for X-ray free-electron laser pulses: diamond versus silicon

Small-angle X-ray scattering from GaN nanowires on Si(111): facet truncation rods, facet roughness and Porod's law

Radius-dependent homogeneous strain in uncoalesced GaN nanowires

Collaborators (2)

Sergio Fernández Garrido

Carsten Richter

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