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Weifeng Yang

Research Scientist

Institute of Materials Research and Engineering

Singapore

Research Interests

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Articles (20)

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Collaborators (2)

Ke Xu

Purdue University

UNITED STATES

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Jie Zhang

University of Michigan

UNITED STATES

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Weifeng Yang

Research Interests

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Articles (20)

Competing self-trapped hole release and deep-level defect recombination in Ga2O3 photodetectors

High-performance large-area β-Ga2O3 MIS trench Schottky barrier diodes with Al2O3/GaON interfacial insulators

Bond-angle modulation in the nucleation layer overcomes the lattice-mismatch limits in Ga2O3 heteroepitaxy

2.7-kV CuCrO2/Ga2O3 heterojunction diode with stepped-mesa termination and on-state electrical stress reliability

Interfacial rare-earth oxide-enabled X-ray-tolerant Ga2O3 MIS Schottky barrier diodes with significant reverse leakage current suppression

Facilitating flat-band voltage shifts of 4H-SiC MOS capacitors by HfO2/SiO2 laminated stacks with multiple interfacial dipole layers

Low-leakage and high on/off current ratio vertical β-Ga2O3 Schottky barrier diodes induced by interface nitrogen doping

Synergistic work function modulation and interface traps suppression in CuCrO2/β-Ga2O3 p-n heterojunction diodes through oxygen vacancy passivation

Normally-off β-AlGaO/Ga2O3 modulation-doped field-effect transistors with GaN P-N junction gate: proposal and investigation

High-Speed and Responsivity 4H–SiC MISIM Ultraviolet Photodetector With Si x N1–x Interlayer by Atomic Nitrogen Treatment

Effects of Gallium on Electron Transport and Bias Stability in Ultrascaled Amorphous InGaO Transistors

Self-Powered Nano Pt/Amorphous Ga₂O₃/Crystalline CuCrO₂ Heterostructure Solar-Blind Photodetector With High Responsivity and Detectivity

Modulating Oxygen Vacancies in β-Ga2O3 Microflake for High-Responsivity Solar-Blind Photodetectors

Increase fixed charge at Al2O3/Ga2O3 interface for high-performance Ga2O3 trench Schottky barrier diodes by atomic nitrogen treatment

First Demonstration of CuCrO2/β-Ga2O3 p-n Heterojunction Diode With High Breakdown Voltage and Low Leakage Current

Performance and Stability Improvements in β-Ga2O3 MOSFET With Thin HfAlO Gate Dielectric by O2 Plasma Treatment

Plasmon-Enhanced Performance in Self-Powered Solar-Blind CuCrO2/β-Ga2O3 Heterojunction Photodetectors With Al Nanoparticles

Low Turn-On Voltage and Reverse Leakage Current β -Ga2O3 MIS Schottky Barrier Diodes With an AlN Interfacial Layer

Effect of Oxygen Precursors on Growth Mechanism in High-Quality β-Ga₂O₃ Epilayers on Sapphire by Molecular Beam Epitaxy and Related Solar-Blind Photodetectors

High-Performance β-Ga₂O₃ MISIM Solar-Blind Photodetectors With an Interfacial AlN Layer

Collaborators (2)

Ke Xu

Jie Zhang

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