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Jie Zhang

University of Michigan

United States

Research Interests

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Professors in United States

Articles (18)

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Collaborators (7)

Mengwei Si

Associate Professor

Shanghai Jiao Tong University

CHINA

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Ke Xu

Purdue University

UNITED STATES

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Yiyang Li

University of Michigan

UNITED STATES

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Ding Wang

Assistant Professor

Peking University

CHINA

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Emmanouil Kioupakis

Associate Professor

University of Michigan

UNITED STATES

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Kai Sun

Associate Research Scientist

University of Michigan

UNITED STATES

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Weifeng Yang

Research Scientist

Institute of Materials Research and Engineering

SINGAPORE

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Jie Zhang

Research Interests

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Articles (18)

600 °C operation of MBE-enabled ScAlN/AlN/GaN FinHEMTs

Molecular beam epitaxy and characterization of wurtzite LaAlN

Beryllium-incorporated ScAlN/GaN HEMTs with low off-current and high current stress stability

Effects of Gallium on Electron Transport and Bias Stability in Ultrascaled Amorphous InGaO Transistors

Sub-100 Ω/□ sheet resistance of GaN HEMT with ScAlN barrier

Self-Heating Effects and Thermal Mitigation Strategies in Ferroelectric ScAlN/GaN HEMTs

High-temperature memory devices based on ferroelectric ScAlN/AlGaN/GaN high-electron-mobility transistors

High performance AlGaN/GaN MISHEMTs using N2O treated TiO2 as the gate dielectric

Low Turn-On Voltage and Reverse Leakage Current β -Ga2O3 MIS Schottky Barrier Diodes With an AlN Interfacial Layer

Effect of Oxygen Precursors on Growth Mechanism in High-Quality β-Ga₂O₃ Epilayers on Sapphire by Molecular Beam Epitaxy and Related Solar-Blind Photodetectors

High-Performance β-Ga₂O₃ MISIM Solar-Blind Photodetectors With an Interfacial AlN Layer

Self-Aligned Ionic Doping of TiO2 Thin-Film Transistors for Enhanced Current Drivability via Postfabrication Superacid Treatment

High-Responsivity Self-Powered Solar-Blind Photodetectors Based on Magnetron-Sputtered CuCrO₂/β-Ga₂O₃ p-n Heterojunction

Lowering the Schottky Barrier Height by Quasi-van der Waals Contacts for High-Performance p-Type MoTe2 Field-Effect Transistors

Review—Extremely Thin Amorphous Indium Oxide Transistors

Transient Thermal and Electrical Co-Optimization of BEOL Top-Gated ALD In2O3 FETs Toward Monolithic 3-D Integration

Ultrathin InGaO Thin Film Transistors by Atomic Layer Deposition

Back-End-of-Line-Compatible Scaled InGaZnO Transistors by Atomic Layer Deposition

Collaborators (7)

Mengwei Si

Ke Xu

Yiyang Li

Ding Wang

Emmanouil Kioupakis

Kai Sun

Weifeng Yang

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