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Yoichi Yamada

Yamaguchi University

Japan

Research Interests

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Professors in Japan

Articles (13)

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2024

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2024

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2024

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2023

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2023

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2023

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2023

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2021

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2021

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2020

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2020

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2020

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2020

Collaborators (2)

Hideaki Murotani

Professor

JAPAN

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Hideto Miyake

Professor

Mie university

JAPAN

View details

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Yoichi Yamada

Research Interests

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Articles (13)

Fabrication of high-quality Al-polar and N-polar AlN templates through self-forming tiny-pit layers and polarity inversion

Photoluminescence Excitation Spectroscopy of Stimulated Emission from AlGaN‐Based Multiple Quantum Wells with an Emission Wavelength Around 280 nm

Temperature‐ and Excitation Power Density‐Resolved Photoluminescence of AlGaN‐Based Multiple Quantum Wells Emitting in the Spectral Range of 220–260 nm

Improvement of electrical properties by insertion of AlGaN interlayer for N-polar AlGaN/AlN structures on sapphire substrates

Optical characterization of point defects on internal quantum efficiency in AlGaN quantum wells grown on face-to-face-annealed sputtered AlN templates

Effects of GaN cap layer thickness on photoexcited carrier density in green luminescent InGaN multiple quantum wells

Long wavelength red to green emissions from {11 2¯ 2} semipolar multi-quantum wells on fully relaxed InGaN underlayer

Evaluation of internal quantum efficiency and stimulated emission characteristics in AlGaN-based multiple quantum wells

Extremely high internal quantum efficiency of AlGaN-based quantum wells on face-to-face annealed sputter-deposited AlN templates

Beyond 53% internal quantum efficiency in a AlGaN quantum well at 326 nm UVA emission and single-peak operation of UVA LED

Correlation between excitons recombination dynamics and internal quantum efficiency of AlGaN-based UV-A multiple quantum wells

Erratum: Beyond 53% internal quantum efficiency in a AlGaN quantum well at 326 nm UVA emission and single-peak operation of UVA LED: Publisher's note (Opt. Lett. (2020) 45: 495 DOI: 10.1364/OL.376894)

External Quantum Efficiency of 6.5% at 300 nm Emission and 4.7% at 310 nm Emission on Bare Wafer of AlGaN-Based UVB LEDs

Collaborators (2)

Hideaki Murotani

Hideto Miyake

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