Yoshiyuki YAMASHITA

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Professor

Kyushu University

Japan

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Recent Grants

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Electronic states and electric properties under device operation

Open Date: 2011-04-28

Close Date: 2015-03-31

Grant: Close

電圧印加硬X線光電子分光法による電極/分子界面の伝導機構の解明

Open Date: 2008-01-01

Close Date: 2009-12-31

Grant: Close

Making the well-defined contacts between molecules and substrates in nm scale and their electronic properties

Open Date: 2005-01-01

Close Date: 2009-12-31

Grant: Close

Electronic properties of single and arranged organic molecules on semiconductor surfaces

Open Date: 2004-01-01

Close Date: 2005-12-31

Grant: Close

分子構造をメモリに利用した1nmスケールメモリーの創成

Open Date: 2001-01-01

Close Date: 2002-12-31

Articles (17)

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2024

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2021

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2021

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2021

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2020

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2020

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2020

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2020

Collaborators (5)

Antonella Parisini

Professor

University of Parma

ITALY

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Benjamin Meunier

Institut de Physique et Chimie des Matériaux de Strasbourg

FRANCE

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Piero Mazzolini

Paul-Drude-Institut fur Festkorperelektronik

GERMANY

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Tomohiro Matsushita

Professor

Nara Institute of Science and Technology（NAIST）

JAPAN

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Jun CHEN

National Institute for Materials Science

JAPAN

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Yoshiyuki YAMASHITA

Research Interests

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Recent Grants

Articles (17)

Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001)

Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)

Bias voltage induced-electrical conductivity at electrode interfaces of a rutile TiO2 single crystal: Two different mechanisms depending on temperature

Crystal structures and photoluminescence characteristics of cesium lead bromide perovskite nanoplatelets depending on the antisolvent and ligand used in their syntheses

メタルレジスト

X-ray Absorption Fine Structural Study of Atomic Structures and Chemical States of Dopants in 4H-SiC(0001)

Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN

Chemical States of Active and Inactive Dopant Sites in Si-doped GaN(0001)

Experimental and theoretical studies on atomic structures of the interface states at SiO<sub>2</sub>/4H-SiC(0001) interface

東北次世代放射光施設

Atomic Structures and Interface States Density at SiO<sub>2</sub>/4H-SiC Interface

Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Si-Doped GaN

Unraveling the Resistive Switching Mechanisms in LaMnO<inf>3+δ</inf>-Based Memristive Devices by Operando Hard X-ray Photoemission Measurements

Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

Band alignment at non-polar AlN/MnS interface investigated by hard X-ray photoelectron spectroscopy

Evaluation of band alignment of srnbo<inf>2</inf>n using hard x-ray photoelectron spectroscopy

Origin of Fermi level pinning in high-k gate stack structures studied by operando hard x-ray photoelectron spectroscopy

Collaborators (5)

Antonella Parisini

Benjamin Meunier

Piero Mazzolini

Tomohiro Matsushita

Jun CHEN

Make your next move.

Yoshiyuki YAMASHITA

Research Interests

Explore related searches

Contact this professor

Recent Grants

Articles (17)

Photoelectron Holographic Study for Atomic Site Occupancy for Si Dopants in Si-Doped κ-Ga2O3(001)

Atomic position and the chemical state of an active Sn dopant for Sn-doped β-Ga2O3(001)

Bias voltage induced-electrical conductivity at electrode interfaces of a rutile TiO2 single crystal: Two different mechanisms depending on temperature

Crystal structures and photoluminescence characteristics of cesium lead bromide perovskite nanoplatelets depending on the antisolvent and ligand used in their syntheses

メタルレジスト

X-ray Absorption Fine Structural Study of Atomic Structures and Chemical States of Dopants in 4H-SiC(0001)

Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN

Chemical States of Active and Inactive Dopant Sites in Si-doped GaN(0001)

Experimental and theoretical studies on atomic structures of the interface states at SiO<sub>2</sub>/4H-SiC(0001) interface

東北次世代放射光施設

Atomic Structures and Interface States Density at SiO&lt;sub&gt;2&lt;/sub&gt;/4H-SiC Interface

Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Si-Doped GaN

Unraveling the Resistive Switching Mechanisms in LaMnO<inf>3+δ</inf>-Based Memristive Devices by Operando Hard X-ray Photoemission Measurements

Interface chemistry of pristine TiN/La: Hf 0.5 Zr 0.5 O 2 capacitors

Band alignment at non-polar AlN/MnS interface investigated by hard X-ray photoelectron spectroscopy

Evaluation of band alignment of srnbo<inf>2</inf>n using hard x-ray photoelectron spectroscopy

Origin of Fermi level pinning in high-k gate stack structures studied by operando hard x-ray photoelectron spectroscopy

Collaborators (5)

Antonella Parisini

Benjamin Meunier

Piero Mazzolini

Tomohiro Matsushita

Jun CHEN

Make your next move.

Atomic Structures and Interface States Density at SiO<sub>2</sub>/4H-SiC Interface