Zbigniew Galazka

Leibniz Institute for Crystal Growth

Germany

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Articles (10)

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2023

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Collaborators (4)

Steffen Ganschow

Leibniz-Institut für Kristallzüchtung

GERMANY

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Kornelius Tetzner

Ferdinand-Braun-Institut Leibniz-Institut für Höchstfrequenztechnik

GERMANY

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Mike Pietsch

Leibniz-Institut für Kristallzüchtung

GERMANY

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Lorenzo Pagnanini

Gran Sasso Science Institute

ITALY

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Zbigniew Galazka

Research Interests

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Articles (10)

Bulk single crystals and physical properties of β-(AlxGa1−x)2O3 (x = 0–0.35) grown by the Czochralski method

Suppression of particle formation by gas-phase pre-reactions in (100) MOVPE-grown β -Ga2O3 films for vertical device application

Enhancement-mode vertical (100) <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> FinFETs with an average breakdown strength of 2.7 MV cm<SUP>-1</SUP>

High-mobility 4 mu m MOVPE-grown (100) beta-Ga2O3 film by parasitic particles suppression

Homoepitaxial growth rate measurement and surface morphology monitoring of MOVPE-grown Si-doped (100) beta-Ga2O3 thin films using in-situ reflectance spectroscopy

The Thermal Conductivity Tensor of beta-Ga2O3 from 300 to 1275 K

Development of a cryogenic In2O3 calorimeter to measure the spectral shape of 115In β-decay

A consistent picture of excitations in cubic BaSnO<sub>3</sub> revealed by combining theory and experiment

A consistent picture of excitations in cubic BaSnO<sub>3</sub> revealed by combining theory and experiment

Cobalt as a promising dopant for producing semi-insulating <i>β</i>-Ga<sub>2</sub>O<sub>3</sub> crystals: Charge state transition levels from experiment and theory

Collaborators (4)

Steffen Ganschow

Kornelius Tetzner

Mike Pietsch

Lorenzo Pagnanini

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