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Zheyang Zheng

University of Science and Technology of China

Research Interests

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Articles (20)

Collaborators (4)

Guangwei Xu

University of Science and Technology of China

Kevin J Chen

The Hong Kong University of Science and Technology

Xiaolong Chen

Southern University of Science and Technology (SUSTech)

Mengyuan Hua

The Hong Kong University of Science and Technology

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Zheyang Zheng

Research Interests

Make your next move.

Explore related searches

Articles (20)

Collaborators (4)

Guangwei Xu

Kevin J Chen

Xiaolong Chen

Mengyuan Hua

Make your next move.

Zheyang Zheng

Research Interests

Make your next move.

Explore related searches

Articles (20)

Time-dependent gate breakdown of Schottky p-GaN gate HEMTs down to 15 K

Observation of two-dimensional hole gas distribution and transport in GaN composite p-channel at cryogenic temperatures

2-kV/16-A β-Ga₂O₃ Schottky Barrier Diodes With Surface Killer Defects Reduced by Ar Plasma Treatment

Perspectives on GaN/SiC hybrid power transistors: A review on heteroepitaxial growth, processing, and device operation

Monolithically Integrated GaN Comparator Based on Complementary Logic

The characteristics of line-shaped defects and their impact mechanism on device performance in β-Ga2O3 Schottky barrier diodes

Suppressed gate leakage and enlarged gate over-drive window of E-mode p-GaN gate double channel HEMTs

GaN-Based Charge Trapping Memory With an AlN Interfacial Layer for Multi-State Operation

Investigating Forward Gate ESD Mechanism of Schottky-Type p-GaN Gate HEMTs Using a SiC-Based High-Speed Pulsed I-V Test System

Gate Driver Design for SiC Power MOSFETs With a Low-Voltage GaN HEMT for Switching Loss Reduction and Gate Protection

Improving the Reverse-Recovery Performance of Si SJ-MOSFETs With a Low-Voltage GaN HEMT in a Cascode Configuration

Protecting SiC JFET From Gate Overstress in GaN/SiC Cascode Device Without Compromising Switching Performance

Characteristics and Evaluation Approaches of Human-Body-Model Electrostatic Discharge Across Schottky p-GaN Gate HEMTs

GaN Power Integration Technology and Its Future Prospects

p-GaN gate power HEMT heterostructure as a versatile platform for extremely wide-temperature-range (X-WTR) applications

Linearity Characterization of Enhancement- Mode p-GaN Gate Radio-Frequency HEMT

Distribution and transport of holes in the p-GaN/AlGaN/GaN heterostructure

Electroluminescence and Gate Carrier Dynamics in a Schottky-Type p-GaN Gate Double-Channel GaN HEMT

Endurance Improvement of GaN Bipolar Charge Trapping Memory With Back Gate Injection

An Actively-Passivated p-GaN Gate HEMT With Screening Effect Against Surface Traps

Collaborators (4)

Guangwei Xu

Kevin J Chen

Xiaolong Chen

Mengyuan Hua

Make your next move.