Akira Kusaba

Assistant Professor

Kyushu University

Japan

Research Interests

Explore related searches

Professors in Japan

Contact this professor

Get a free first email built on one of their papers, ready for you to edit and send yourself.

About

Dr. Akira Kusaba is an Assistant Professor at Kyushu University in Japan. His research interests include density functional theory applications in material science, particularly focusing on graphene-like BCN systems, hydrogenated amorphous carbon, and GaN growth surfaces. He also explores innovative modeling techniques for plasma turbulence and the decomposition processes in metal-organic vapor-phase epitaxy.

Articles (14)

Year:

2025

Year:

2025

Year:

2025

Year:

2024

Year:

2023

Year:

2022

Year:

2022

Year:

2022

Year:

2022

Year:

2021

Year:

2021

Year:

2021

Year:

2020

Year:

2020

Collaborators (4)

Yoshihiro Kangawa

Professor, Dr. Eng.

Kyushu University

JAPAN

View details

Pawel Kempisty

Assistant Professor

Institute of High Pressure Physics

POLAND

View details

Stanislaw Krukowski

Professor

Institute of High Pressure Physics

POLAND

View details

David Bowler

University College London

UNITED KINGDOM

View details

ApplyKite TwinLearns as you apply

Make your next move.

Prepare your application

Review drafts before you send them.

Akira Kusaba

Research Interests

Explore related searches

Contact this professor

About

Articles (14)

Exploration of Stable Atomic Configurations in Graphene-like BCN Systems by Density Functional Theory and Bayesian Optimization

First-principles molecular dynamics of H2 molecule formation inside hydrogenated amorphous carbon

SAT solver-driven approach for validating local electron counting rule

Augmentation of the electron counting rule with Ising model

Polar GaN Surfaces under Gallium Rich Conditions: Revised Thermodynamic Insights from Ab Initio Calculations

Beyond ab initio reaction simulator: An application to GaN metalorganic vapor phase epitaxy

DFT Modeling of Unintentional Oxygen Incorporation Enhanced by Magnesium in GaN(0001) and AlN(0001) Growth Surfaces during Metal‐Organic Vapor‐Phase Epitaxy

Exploration of a large-scale reconstructed structure on GaN(0001) surface by Bayesian optimization

A new combination of Hankel and sparsity-promoting dynamic mode decompositions and its application to the prediction of plasma turbulence

Theoretical study on the effect of H2 and NH3 on trimethylgallium decomposition process in GaN MOVPE

Facet stability of GaN during tri-halide vapor phase epitaxy: anab initio-based approach

Progress in Modeling Compound Semiconductor Epitaxy: Unintentional Doping in GaN MOVPE

Thermodynamic analysis for nonpolar III-nitride surfaces under metalorganic vapor-phase epitaxy conditions

Sparsity-promoting dynamic mode decomposition of plasma turbulence

Collaborators (4)

Yoshihiro Kangawa

Pawel Kempisty

Stanislaw Krukowski

David Bowler

Make your next move.