Stanislaw Krukowski

Professor

Institute of High Pressure Physics

Poland

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Stanislaw Krukowski is a Professor at the Institute of High Pressure Physics PAS in Poland. His research focuses on elasticity in BCC alloys, metal contact innovations for p-Type GaN, and the bonding characteristics of nitrides and graphene. He has published extensively, exploring topics such as polarization effects, recombination mechanisms, and the thermodynamics of semiconductor growth.

Articles (18)

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2025

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2025

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2025

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2025

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2024

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2024

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2024

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2024

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2023

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2023

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2023

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2022

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2022

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2021

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2021

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2020

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2020

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2020

Collaborators (14)

Yoshihiro Kangawa

Professor, Dr. Eng.

Kyushu University

JAPAN

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Akira Kusaba

Assistant Professor

Kyushu University

JAPAN

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Eva Monroy

Université Grenoble Alpes

FRANCE

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Marek Muzyk

Cardinal Stefan Wyszyński University in Warsaw

POLAND

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Pawel Kempisty

Assistant Professor

Institute of High Pressure Physics

POLAND

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Anna Kafar

Institute of High Pressure Physics

POLAND

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Pawel Strak

Institute of High Pressure Physics

POLAND

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Agata Kaminska

assistant professor

Institute of High Pressure Physics

POLAND

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Krzysztof Korona

professor

University of Warsaw

POLAND

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Grzegorz Muziol

Institute of High Pressure Physics, Polish Academy of Sciences

POLAND

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Konrad Sakowski

Institute of High Pressure Physics

POLAND

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Aleksandra Wierzbicka

Polska Akademia Nauk Instytut Fizyki

POLAND

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Piotr Perlin

professor

Institute of High Pressure Physics

POLAND

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David Bowler

University College London

UNITED KINGDOM

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Stanislaw Krukowski

Research Interests

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About

Articles (18)

Ab Initio Elucidation of the Nature of the Bonding of Tetrahedral Nitrides (BN, AlN, GaN, and InN), Hexagonal BN, and Graphene

Spontaneous and Piezo Polarization Versus Polar Surfaces: Fundamentals and Ab Initio Calculations

Elastic Anisotropy in BCC Ti-X Alloys (X = V, Nb, Ta) Determined from First Principles

Fundamentals of Metal Contact to p-Type GaN—A New Multilayer Energy-Saving Design

Augmentation of the electron counting rule with Ising model

Coulomb Contribution to Shockley–Read–Hall Recombination

Ab Initio Molecular Dynamics Insight to Structural Phase Transition and Thermal Decomposition of InN

Charge-Controlled Energy Optimization of the Reconstruction of Semiconductor Surfaces: sp3–sp2 Transformation of Stoichiometric GaN(0001) Surface to (4 × 4) Pattern

Incorporation of indium into GaN layers in the context of MOVPE thermodynamics and growth – Ab initio studies

Polarization Doping in a GaN-InN System—Ab Initio Simulation

Melting versus Decomposition of GaN: Ab Initio Molecular Dynamics Study and Comparison to Experimental Data

The Role of the Built-In Electric Field in Recombination Processes of GaN/AlGaN Quantum Wells: Temperature- and Pressure-Dependent Study of Polar and Non-Polar Structures

Optical properties of polar and nonpolar GaN/AlN multiquantum well systems—DFT study

Critical Evaluation of Various Spontaneous Polarization Models and Induced Electric Fields in III-Nitride Multi-Quantum Wells

Nitrogen Dissolution in Liquid Ga and Fe: Comprehensive Ab Initio Analysis, Relevance for Crystallization of GaN

Defect-related photoluminescence and photoluminescence excitation as a method to study the excitonic bandgap of AlN epitaxial layers: Experimental and ab initio analysis

Wurtzite quantum well structures under high pressure

Ab initio and thermodynamic picture of Al adsorption of AlN(0001) surface – Role of bond creation and electron transition contributions

Collaborators (14)

Yoshihiro Kangawa

Akira Kusaba

Eva Monroy

Marek Muzyk

Pawel Kempisty

Anna Kafar

Pawel Strak

Agata Kaminska

Krzysztof Korona

Grzegorz Muziol

Konrad Sakowski

Aleksandra Wierzbicka

Piotr Perlin

David Bowler

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