Pawel Kempisty

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Assistant Professor

Institute of High Pressure Physics

Poland

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About

Dr. Pawel Kempisty is an Assistant Professor at the Institute of High Pressure Physics PAS in Poland. His research focuses on advanced materials, particularly in the fields of electron structure analysis, defect migration in heterostructures, and the optimization of crystal growth processes. He has contributed to several recent articles exploring topics such as the bonding nature of nitrides, computational fluid dynamics in ammonothermal systems, and atomic configurations in graphene-like materials.

Recent Grants

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Termodynamika ab initio i inżynieria defektów punktowych w nanometrycznych obszarach przypowierzchniowych półprzewodników azotkowych.

Open Date: 2022-01-13

Close Date: 2025-01-12

Grant: Close

Fermi level position and work function at GaN surfaces

Open Date: 2019-08-01

Close Date: 2020-06-01

Grant: Close

Theoretical and experimental studies of the Fermi level position and work function at GaN surface

Open Date: 2019-03-01

Close Date: 2019-05-01

Grant: Close

Dynamika sieci i stabilność termodynamiczna powierzchni półprzewodników azotkowych wyliczane w oparciu o metody ab initio.

Open Date: 2018-06-29

Close Date: 2021-04-28

Grant: Close

Thermodynamic stability of nitride semiconductors surfaces including phonon properties

Open Date: 2018-04-01

Close Date: 2019-03-01

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Collaborators (26)

Leszek Konczewicz

Institute of High Pressure Physics

POLAND

Pawel Kempisty

Research Interests

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About

Recent Grants

Articles (20)

CFD-Based Optimization of the Growth Zone in an Industrial Ammonothermal GaN Autoclave for Uniform Flow and Temperature Fields

Exploration of Stable Atomic Configurations in Graphene-like BCN Systems by Density Functional Theory and Bayesian Optimization

Ab Initio Elucidation of the Nature of the Bonding of Tetrahedral Nitrides (BN, AlN, GaN, and InN), Hexagonal BN, and Graphene

Atomistic insights into defect migration in In x Ga 1 − x N / GaN heterostructures: composition and temperature effects

Spontaneous and Piezo Polarization Versus Polar Surfaces: Fundamentals and Ab Initio Calculations

The Impact of GaN Crystal Growth on Ammonia Flow Dynamics in Ammonothermal Processes

Valence-band electronic structure of As-terminated GaN(0001) surfaces

Influence of Intrinsic Point Defects Incorporated from Growth Surface on Atomic Interdiffusion and Unintentional Compositional Gradient in AlGaN/AlN Heterointerfaces

Augmentation of the electron counting rule with Ising model

Coulomb Contribution to Shockley–Read–Hall Recombination

Polar GaN Surfaces under Gallium Rich Conditions: Revised Thermodynamic Insights from Ab Initio Calculations

Incorporation of indium into GaN layers in the context of MOVPE thermodynamics and growth – Ab initio studies

Polarization Doping in a GaN-InN System—Ab Initio Simulation

Modeling of the Point Defect Migration across the AlN/GaN Interfaces&mdash;Ab Initio Study

Identification of the Kirkendall effect as a mechanism responsible for thermal decomposition of the InGaN/GaN MQWs system

Role of Metallic Adlayer in Limiting Ge Incorporation into GaN

Polarization doping-Ab initio verification of the concept: Charge conservation and nonlocality

Optical properties of polar and nonpolar GaN/AlN multiquantum well systems—DFT study

Al coverage of AlN(0001) surface and Al vapor pressure – Thermodynamic assessment based on ab initio calculations

Investigation of beryllium diffusion in HVPE-GaN grown in [11–20] and [10-10] crystallographic directions

Collaborators (26)

Leszek Konczewicz

Ewa Grzanka

Yoshihiro Kangawa

Akira Kusaba

Eva Monroy

Marta Sawicka

Anna Kafar

Zbigniew Zytkiewicz

Stanislaw Krukowski

Pawel Strak

Henryk Turski

Tomasz Sochacki

Agata Kaminska

Jan Łażewski

Grzegorz Muziol

Konrad Sakowski

Paweł Wolny

Marcin Siekacz

Roman Hrytsak

Agata Sabik

Takahiro Kawamura

Anna Reszka

Malgorzata Sznajder

Piotr Perlin

David Bowler

Dominika Majchrzak

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Modeling of the Point Defect Migration across the AlN/GaN Interfaces—Ab Initio Study