Andrea Ardenghi

Paul Drude Institute for Solid State Electronics

Germany

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Articles (5)

Year:

2025

Year:

2025

Year:

2024

Year:

2024

Year:

2022

Collaborators (4)

Piero Mazzolini

Paul-Drude-Institut fur Festkorperelektronik

GERMANY

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Wenshan Chen

Paul Drude Institute for Solid State Electronics

GERMANY

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Georg Hoffmann

Paul Drude Institute for Solid State Electronics

GERMANY

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Manfred Martin

GERMANY

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Andrea Ardenghi

Research Interests

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Articles (5)

Effect of lithium diffusion into Ga2O3 thin films

Carrier Concentration–Dependent Seebeck Coefficient in β‐Ga2O3

Etching of elemental layers in oxide molecular beam epitaxy by O2-assisted formation and evaporation of their volatile (sub)oxide: The examples of Ga and Ge

Phase-selective growth of κ- vs β-Ga2O3 and (InxGa1−x)2O3 by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy

Toward controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to β -Ga2O3

Collaborators (4)

Piero Mazzolini

Wenshan Chen

Georg Hoffmann

Manfred Martin

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