Georg Hoffmann

Paul Drude Institute for Solid State Electronics

Germany

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Articles (9)

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2025

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2024

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2024

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2023

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2023

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2023

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2022

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2021

Year:

2021

Collaborators (6)

Martin Feneberg

Otto-von-Guericke Universität Magdeburg

GERMANY

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Piero Mazzolini

Paul-Drude-Institut fur Festkorperelektronik

GERMANY

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Roger A. De Souza

RWTH Aachen University

GERMANY

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Franz-Philipp Schmidt

Fritz-Haber-Institut der Max-Planck-Gesellschaft

GERMANY

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Andrea Ardenghi

Paul Drude Institute for Solid State Electronics

GERMANY

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Manfred Martin

GERMANY

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Georg Hoffmann

Research Interests

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Articles (9)

Oxygen diffusion in LaInO3 films grown by molecular beam epitaxy

Polar discontinuity governs surface segregation and interface termination: A case study of LaInO3/BaSnO3

Enabling 2D Electron Gas with High Room‐Temperature Electron Mobility Exceeding 100 cm2 Vs−1 at a Perovskite Oxide Interface

Epitaxial synthesis of unintentionally doped p-type SnO (001) via suboxide molecular beam epitaxy

Adsorption-controlled plasma-assisted molecular beam epitaxy of LaInO3 on DyScO3 (110): Growth window, strain relaxation, and domain pattern

Erratum: “Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources” [APL Mater. 9, 111110 (2021)]

Toward controllable Si-doping in oxide molecular beam epitaxy using a solid SiO source: Application to β -Ga2O3

Drastically enhanced cation incorporation in the epitaxy of oxides due to formation and evaporation of suboxides from elemental sources

Erratum: “Adsorption-controlled growth of Ga2O3 by suboxide molecular-beam epitaxy,” [APL. Mater. 9, 031101 (2021)]

Collaborators (6)

Martin Feneberg

Piero Mazzolini

Roger A. De Souza

Franz-Philipp Schmidt

Andrea Ardenghi

Manfred Martin

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