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Andreas Fiedler

Head of electrical characterization

Leibniz-Institut für Kristallzüchtung

Germany

Research Interests

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Professors in Germany

Articles (13)

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2026

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2026

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2026

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2025

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2025

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2025

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2025

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2023

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2023

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2023

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2023

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2023

Collaborators (8)

Steffen Ganschow

Leibniz-Institut für Kristallzüchtung

GERMANY

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Natasha Dropka

Leibniz Institute for Crystal Growth

GERMANY

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Kornelius Tetzner

Ferdinand-Braun-Institut Leibniz-Institut für Höchstfrequenztechnik

GERMANY

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Mike Pietsch

Leibniz-Institut für Kristallzüchtung

GERMANY

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Jinwoo Hwang

UNITED STATES

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Ta-Shun Chou

Leibniz Institute for Crystal Growth

GERMANY

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Matthias Bickermann

Professor

Technische Universität Berlin

GERMANY

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Zbigniew Galazka

Leibniz Institute for Crystal Growth

GERMANY

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Andreas Fiedler

Research Interests

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Articles (13)

Metalorganic vapor phase epitaxy of β-(AlxGa1−x)2O3 (x = 0–0.55) and multilayer structure on (100) β-(Al0.24Ga0.76)2O3 substrates

Carrier Transport and Electrical Bandgaps in Epitaxial CrN Layers

Bulk Rutile‐GeO2 Single Crystals and Epi‐Ready Wafers

Incorporation of divalent transition-metal ions in bulk In2O3 single crystals grown from the melt and their impact on optical and electrical properties

Optimizing the morphology transition on MOVPE-grown (100) β-Ga2O3 film between step-flow growth and step-bunching: A machine learning-assisted approach

In-situ reflectance analysis of Si-doped β-Ga2O3 films grown by MOVPE: The influence of doping concentration and substrate conductivity

Impurity-induced step pinning and recovery in MOVPE-grown (100) β-Ga2O3 film

The electric field influence on EC-0.18 eV electron trap level in (100)-oriented β-Ga2O3 crystals grown by the Czochralski method

Bulk single crystals and physical properties of β-(AlxGa1−x)2O3 (x = 0–0.35) grown by the Czochralski method

Ge-ion implantation and activation in (100) β-Ga2O3 for ohmic contact improvement using pulsed rapid thermal annealing

Plasma-assisted deposition and characterization of Al2O3 dielectric layers on (001) β -Ga2O3

Charge state transition levels of Ni in β-Ga2O3 crystals from experiment and theory: An attractive candidate for compensation doping

Exploring miscut angle influence on (100) β-Ga2O3 homoepitaxial films growth: Comparing MOVPE growth with MBE approaches

Collaborators (8)

Steffen Ganschow

Natasha Dropka

Kornelius Tetzner

Mike Pietsch

Jinwoo Hwang

Ta-Shun Chou

Matthias Bickermann

Zbigniew Galazka

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